Cationic disorder in an Sr2FeMoO6 binary oxide with a perovskite structure L. S. LobanovskiiS. V. TrukhanovI. O. Troyanchuk Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 273 - 276
A vacancy model of the heteropolytype epitaxy of SiC A. A. LebedevS. Yu. Davydov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 277 - 280
Internal friction in semiconductor thin films grown using sol-gel technology A. S. Il’inA. I. MaksimovN. P. Yaroslavtsev Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 281 - 284
Reflection spectra of two polymorphic modifications of cadmium arsenide A. I. KozlovV. V. SobolevA. F. Knjazev Electronic and Optical Properties of Semiconductors Pages: 285 - 288
Statistics of electrons in PbS with U centers S. A. NemovF. S. NasredinovE. S. Khuzhakulov Electronic and Optical Properties of Semiconductors Pages: 289 - 292
The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation M. V. ArdyshevV. M. ArdyshevYu. Yu. Kryuchkov Electronic and Optical Properties of Semiconductors Pages: 293 - 295
The effect of pressing on the luminescent properties of ZnS:Ga powders Yu. Yu. BacherikovN. V. KitsyukA. A. Stadnik Electronic and Optical Properties of Semiconductors Pages: 296 - 299
Spectroscopic parameters of the absorption bands related to the local vibrational modes of carbon and oxygen impurities in silicon enriched with 28Si, 29Si, and 30Si isotopes P. G. SennikovT. V. KoterevaH. -J. Pohl Electronic and Optical Properties of Semiconductors Pages: 300 - 307
The effect of tellurium diffusion from an n-GaSb:Te substrate on the properties of GaInAsSb solid solutions grown from lead-containing melt T. I. VoroninaT. S. LagunovaYu. P. Yakovlev Electronic and Optical Properties of Semiconductors Pages: 308 - 312
Depolarization in a metal-p-ferroelectric-n-semiconductor structure L. S. Berman Semiconductor Structures, Interfaces, and Surfaces Pages: 313 - 316
A model for describing hole scattering at GaAs/AlAs(001) heterointerfaces G. F. KaravaevV. N. Chernyshov Semiconductor Structures, Interfaces, and Surfaces Pages: 317 - 324
A quasi-classical description of the conductivity oscillations in layered crystals under the condition of charge-carrier scattering by acoustic phonons P. V. Gorskii Semiconductor Structures, Interfaces, and Surfaces Pages: 325 - 330
The charge-transport mechanisms and photosensitivity of n-ZnO:Al/CuPc/p-Cu(In,Ga)Se2 structures G. A. Il’chukS. E. NikitinE. I. Terukov Semiconductor Structures, Interfaces, and Surfaces Pages: 331 - 335
Vegard’s law and superstructural phases in AlxGa1−x As/GaAs(100) epitaxial heterostructures É. P. DomashevskayaP. V. SeredinI. S. Tarasov Semiconductor Structures, Interfaces, and Surfaces Pages: 336 - 342
Atmospheric adsorption effects in hot-wire chemical-vapor-deposition microcrystalline silicon films with different electrode configurations S. K. PersheyevV. SmirnovM. J. Rose Amorphous, Vitreous, and Porous Semiconductors Pages: 343 - 346
The role of boron impurity in the activation of free charge carriers in layers of porous silicon during the adsorption of acceptor molecules L. A. OsminkinaE. A. KonstantinovaV. Yu. Timoshenko Amorphous, Vitreous, and Porous Semiconductors Pages: 347 - 350
The density of states in the mobility gap of amorphous hydrogenated silicon doped with erbium A. V. BiryukovA. G. KazanskiiK. Yu. Khabarova Amorphous, Vitreous, and Porous Semiconductors Pages: 351 - 353
A new physical mechanism for the formation of critical turn-on charge in thyristor structures T. T. MnatsakanovS. N. YurkovA. G. Tandoev Physics of Semiconductor Devices Pages: 354 - 359
A method for measuring the lifetime of charge carriers in the base regions of high-speed diode structures V. V. TogatovP. A. Gnatyuk Physics of Semiconductor Devices Pages: 360 - 363
Spectrometry of short-range ions using detectors based on 4H-SiC films grown by chemical vapor deposition N. B. StrokanA. M. IvanovG. N. Violina Physics of Semiconductor Devices Pages: 364 - 369
High-power laser diodes based on asymmetric separate-confinement heterostructures D. A. VinokurovS. A. ZorinaI. S. Tarasov Physics of Semiconductor Devices Pages: 370 - 373
A review of the book Atomy legiruyushchikh primese \(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) v poluprovodnikakh (Atoms of doping impurities in semiconductors) by V.I. Fistul’ (Moscow: Fizmatlit, 2004) M. G. Mil’vidskiiV. B. Ufimtsev Book Review Pages: 374 - 375