Abstract
The lattice constants of AlxGa1−x As epitaxial alloys with various AlAs (x) contents are determined for AlxGa1−x As/GaAs(100) heterostructures grown by MOC-hydride epitaxy using X-ray diffractometry and an X-ray back-reflection method. An ordered AlGaAs2 (superstructural) phase is found in epitaxial heterostructures with x ≈ 0.50. The lattice constant of this phase is smaller than the lattice constants of an Al0.50Ga0.50As alloy and GaAs single-crystal substrate.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 3, 2005, pp. 354–360.
Original Russian Text Copyright © 2005 by Domashevskaya, Seredin, Dolgopolova, Zanin, Arsent’ev, Vinokurov, Stankevich, Tarasov.
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Domashevskaya, É.P., Seredin, P.V., Dolgopolova, É.A. et al. Vegard’s law and superstructural phases in AlxGa1−x As/GaAs(100) epitaxial heterostructures. Semiconductors 39, 336–342 (2005). https://doi.org/10.1134/1.1882797
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DOI: https://doi.org/10.1134/1.1882797