Abstract
The effect of doping films of amorphous hydrogenated silicon (a-Si:H) with erbium on the density of the states in the mobility gap is studied. The data obtained are compared with those for a-Si:H films doped with arsenic. The data on the density of the states in the lower and upper halves of the mobility gap are determined from measurements of the spectral dependences of the absorption coefficient and the temperature dependences of the constant and modulated components of the photoconductivity in films exposed to modulated light, respectively. It is shown that doping the a-Si:H films with erbium leads to an increase in the density of states both in the lower and upper halves of the mobility gap.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 3, 2005, pp. 369–371.
Original Russian Text Copyright © 2005 by Biryukov, Kazanski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Terukov, Khabarova.
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Biryukov, A.V., Kazanskii, A.G., Terukov, E.I. et al. The density of states in the mobility gap of amorphous hydrogenated silicon doped with erbium. Semiconductors 39, 351–353 (2005). https://doi.org/10.1134/1.1882800
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DOI: https://doi.org/10.1134/1.1882800