Abstract
The depolarization in a metal-p-ferroelectric-n-semiconductor structure is calculated based on an analysis of the experimental parameters of a ferroelectric hysteresis loop in a metal-ferroelectric-metal structure. For a semiconductor, the Poisson equation is solved using a standard method, while, for a ferroelectric, a numerical integration is applied. Two variants of semiconductor parameters are considered: (i) a thick n-type region (there is a region of electrical neutrality beyond a space-charge region), and (ii) a thin n-type region (an electric field penetrates all the way through this region). It is shown that depolarization significantly reduces ferroelectric polarization, and this reduction is stronger in the case of a semiconductor with lower doping. If the electric field penetrates all the way through the n-type region, depolarization decreases as the n-type region becomes thinner.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 3, 2005, pp. 332–335.
Original Russian Text Copyright © 2005 by Berman.
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Berman, L.S. Depolarization in a metal-p-ferroelectric-n-semiconductor structure. Semiconductors 39, 313–316 (2005). https://doi.org/10.1134/1.1882793
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DOI: https://doi.org/10.1134/1.1882793