Mechanisms of defect formation in ingots of 4H silicon carbide polytype D. D. AvrovA. V. BulatovA. Yu. Fadeev Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 15 April 2011 Pages: 277 - 283
The I–V characteristics of asymmetrically necked samples of high-resistivity silicon S. AšmontasV. Kleiza Electronic Properties of Semiconductors 15 April 2011 Pages: 284 - 287
Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field M. G. Dadamirzayev Electronic Properties of Semiconductors 15 April 2011 Pages: 288 - 291
Effect of temperature on electron spectra in the region of the intrinsic-absorption edge of CdGa2Se4 T. G. KerimovaR. A. Guliyev Electronic Properties of Semiconductors 15 April 2011 Pages: 292 - 294
A model of nonlinear optical transmittance for insulator nanocomposites V. P. DzyubaA. E. KrasnokI. V. Dzyuba Spectroscopy, Interaction with Radiation 15 April 2011 Pages: 295 - 301
Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane J. S. VainshteinO. I. Kon’kovO. M. Sreseli Surfaces, Interfaces, and Thin Films 15 April 2011 Pages: 302 - 305
Raman scattering in self-formed nanoporous carbon produced on the basis of silicon carbide M. E. KompanD. S. KrylovV. V. Sokolov Surfaces, Interfaces, and Thin Films 15 April 2011 Pages: 306 - 311
Mechanisms of current flow in Au-CdTe contacts with a modified surface V. P. MachnijN. J. Skrypnyk Surfaces, Interfaces, and Thin Films 15 April 2011 Pages: 312 - 315
Optical constants detection in tin dioxide nano-size layers by surface plasmon resonance investigation B. K. SerdegaI. E. MatyashB. M. Yücel Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 April 2011 Pages: 316 - 319
Photoreflectance spectroscopy of electron-hole states in a graded-width GaAs/InGaAs/GaAs quantum well L. P. AvakyantsP. Yu. BokovA. V. Chervyakov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 April 2011 Pages: 320 - 324
Silicon-on-insulator structures with a nitrogenated buried SiO2 layer: Preparation and properties I. E. TyschenkoV. P. Popov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 April 2011 Pages: 325 - 332
Structure and properties of small clusters of transition 3d-element oxides A. V. Popov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 15 April 2011 Pages: 333 - 337
Carrier transport in layered semiconductor (p-GaSe)-ferroelectric (KNO3) composite nanostructures A. P. BakhtinovV. N. VodopyanovD. Yu. Konoplyanko Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 15 April 2011 Pages: 338 - 349
Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy A. V. VasinP. N. OkholinY. Ishikawa Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 15 April 2011 Pages: 350 - 354
Analysis of spatial modes in half-disk lasers based on AlGaAsSb/InGaAsSb quantum well nanoheterostructures A. N. ImenkovV. V. SherstnevYu. P. Yakovlev Physics of Semiconductor Devices 15 April 2011 Pages: 355 - 361
Edge inversion channels and surface leakage currents in high-voltage semiconductor devices A. S. Kyuregyan Physics of Semiconductor Devices 15 April 2011 Pages: 362 - 368
Laminated grid solar cells (LGCells) on multicrystalline silicon. Application of atomic hydrogen treatment G. G. UntilaT. N. KostO. I. Solodukha Physics of Semiconductor Devices 15 April 2011 Pages: 369 - 375
Optimization of the configuration of a symmetric three-barrier resonant-tunneling structure as an active element of a quantum cascade detector N. V. TkachJu. A. Seti Physics of Semiconductor Devices 15 April 2011 Pages: 376 - 384
HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays M. V. YakushevD. V. BrunevA. V. Sorochkin Physics of Semiconductor Devices 15 April 2011 Pages: 385 - 391
Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond A. A. AltukhovA. L. VikharevYu. Yu. Fedorov Fabrication, Treatment, and Testing of Materials and Structures 15 April 2011 Pages: 392 - 396
The influence of hydrogenation on the electrical properties of the Cd x Hg1 − x Te epitaxial structures V. S. VaravinG. Yu. SidorovYu. G. Sidorov Fabrication, Treatment, and Testing of Materials and Structures 15 April 2011 Pages: 397 - 402
Investigation of the local density of states in self-assembled GeSi/Si(001) nanoislands by combined scanning tunneling and atomic-force microscopy P. A. BorodinA. A. BukharaevYu. A. Denisov Fabrication, Treatment, and Testing of Materials and Structures 15 April 2011 Pages: 403 - 407
The effect of composition on the formation of light-emitting Si nanostructures in SiO x layers on irradiation with swift heavy ions G. A. KachurinS. G. CherkovaA. G. Cherkov Fabrication, Treatment, and Testing of Materials and Structures 15 April 2011 Pages: 408 - 414
Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current B. Ya. BerE. V. BogdanovaE. B. Yakimov Fabrication, Treatment, and Testing of Materials and Structures 30 March 2011 Pages: 415 - 421