Abstract
The SiO x layers different in composition (0 < x < 2) are irradiated with Xe ions with the energy 167 MeV and the dose 1014 cm−2 to stimulate the formation of light-emitting Si nanostructures. The irradiation gives rise to a photoluminescence band with the parameters dependent on x. As the Si content is increased, the photoluminescence is first enhanced, with the peak remaining arranged near the wavelength λ ≈ 600 nm, and then the peak shifts to λ ≈ 800 nm. It is concluded that the emission sources are quantum-confined nanoprecipitates formed by disproportionation of SiO x in ion tracks due to profound ionization losses. Changes in the photoluminescence spectrum with increasing x are attributed firstly to the increase in the probability of formation of nanoprecipitates and then to the increase in their dimensions; the latter effect is accompanied with a shift of the emission band to longer wavelengths. The subsequent quenching of photoluminescence is interpreted as a result of the removal of quantum confinement in nanoprecipitates and their coagulation.
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Original Russian Text © G.A. Kachurin, S.G. Cherkova, D.V. Marin, V.G. Kesler, V.A. Skuratov, A.G. Cherkov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 3, pp. 419–424.
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Kachurin, G.A., Cherkova, S.G., Marin, D.V. et al. The effect of composition on the formation of light-emitting Si nanostructures in SiO x layers on irradiation with swift heavy ions. Semiconductors 45, 408–414 (2011). https://doi.org/10.1134/S1063782611030122
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DOI: https://doi.org/10.1134/S1063782611030122