Abstract
Electrical properties of silicon-on-insulator (SOI) structures with buried SiO2 layer implanted with nitrogen ions are studied in relation to the dose and energy of N+ ions. It is shown that implantation of nitrogen ions with doses >3 × 1015 cm−2 and an energy of 40 keV brings about a decrease in the fixed positive charge in the oxide and a decrease in the density of surface stares by a factor of 2. An enhancement of the effect can be attained by lowering the energy of nitrogen ions. The obtained results are accounted for by interaction of nitrogen atoms with excess silicon atoms near the Si/SiO2 interface; by removal of Si-Si bonds, which are traps of positive charges; and by saturation of dangling bonds at the bonding interface of the SOI structure.
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Original Russian Text © I.E. Tyschenko, V.P. Popov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 3, pp. 335–342.
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Tyschenko, I.E., Popov, V.P. Silicon-on-insulator structures with a nitrogenated buried SiO2 layer: Preparation and properties. Semiconductors 45, 325–332 (2011). https://doi.org/10.1134/S1063782611030201
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DOI: https://doi.org/10.1134/S1063782611030201