Theoretical treatment of the conductivity of textured inhomogeneous materials I. V. Lavrov Basic Resarch 17 December 2009 Pages: 1623 - 1627
Some specific features of edge luminescence of CdS(O) in the context of the band’s anticrossing theory N. K. MorozovaN. D. DanilevichV. M. Lisitsyn Basic Resarch 17 December 2009 Pages: 1628 - 1634
Thermodynamic aspects of formation of quantum-dimensional GaN-based heterostructures E. N. Vigdorovich Materials for Electronic Engineering 17 December 2009 Pages: 1635 - 1640
Formation of acceptor centers under the action of redox media on the surface of Cd x Hg1 − x Te films V. S. VaravinG. Yu. Sidorov Materials for Electronic Engineering 17 December 2009 Pages: 1641 - 1646
Optimization of technology of growing GaN heterostructures with using diffractometry analysis I. G. ErmoshinI. N. TsyplenkovYu. N. Sveshnikov Materials for Electronic Engineering 17 December 2009 Pages: 1647 - 1649
Study of electronic and magnetic properties of the CuFeS2 semiconductor compound in the temperature range 77–300 K I. Kh. KhabibullinE. V. SchmidtV. L. Matukhin Materials for Electronic Engineering 17 December 2009 Pages: 1650 - 1653
Layered structure of anodic SiO2 films doped with phosphorus or boron L. P. Mileshko Materials for Electronic Engineering 17 December 2009 Pages: 1654 - 1656
Analysis of specific growth features of zinc oxide nanocrystals from aqueous solutions to fabricate thin-film solar cells S. A. GavrilovM. Yu. NazarkinE. V. Artemova Microelectronics Technology 17 December 2009 Pages: 1657 - 1659
Silicon nanoprofiling with the use of a solid aluminum oxide mask and combined “dry” etching A. N. BelovYu. A. DemidovA. A. Vasilyev Microelectronics Technology 17 December 2009 Pages: 1660 - 1662
A precise source follower with a low input current, based on field-effect transistors with a control barrier contact N. V. GuminovV. I. Starosel’skii Microelectronic Devices and Systems 17 December 2009 Pages: 1663 - 1666
Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses L. V. KatsoevV. V. KatsoevÉ. A. Il’ichev Microelectronic Devices and Systems 17 December 2009 Pages: 1667 - 1670
Study of the influence of design-technological factors on the conductivity and breakdown voltage of lateral double-diffused MOS transistors using numerical simulation V. Ya. NiskovS. N. ZolotarevA. N. Gashkov Microelectronic Devices and Systems 17 December 2009 Pages: 1671 - 1676
Photonic structures and their application for measuring material parameters D. A. UsanovA. V. Skripal’M. Yu. Kulikov Microelectronic Devices and Systems 17 December 2009 Pages: 1677 - 1681
Photoelectric processes in a five-diode vertically integrated spectrally selective photocell V. I. KhainovskiiE. A. Ignat’evaV. V. Uzdovskii Microelectronic Devices and Systems 17 December 2009 Pages: 1682 - 1686
Simulation of a microprofile and electric field distribution in MIM structures T. I. DanilinaP. E. Troyan Microelectronic Devices and Systems 17 December 2009 Pages: 1687 - 1689
A study of the effect of fast neutrons and electrons on white and blue LEDs V. N. GridinI. V. RyzhikovV. S. Vinogradov Microelectronic Devices and Systems 17 December 2009 Pages: 1690 - 1694
Effects of the shape of spin gate elements on their magnetic and magnetoresistive characteristics A. V. GoryachevM. Yu. ChinenkovF. A. Pudonin Microelectronic Devices and Systems 17 December 2009 Pages: 1695 - 1699
Injection photodiodes based on low-resistivity ZnS single crystals V. V. Losev Microelectronic Devices and Systems 17 December 2009 Pages: 1700 - 1703
Structure and properties of optical waveguides in stoichiometric LiNbO3 crystals S. M. KostritskiiYu. N. KorkishkoP. Moretti Microelectronic Devices and Systems 17 December 2009 Pages: 1704 - 1708
fT × BVcbo product modeling for SiGe:C HBTs K. O. PetrosjancR. A. Torgovnikov Microelectronic Devices and Systems 17 December 2009 Pages: 1709 - 1713
Nanotube-based three-dimensional albumin composite obtained using continuous laser radiation S. A. AgeevaI. I. BobrinetskiiV. V. Savranskii Nanotechnology 17 December 2009 Pages: 1714 - 1718
Features of ecological control in nanotechnologies in view of features of Ca y La1 − y F3 − y and La x Ca1 − x F2 + x structuring S. K. Maksimov Nanotechnology 17 December 2009 Pages: 1719 - 1724
Systematic features of defocused images in scanning electron microscopy and nanoscale size measurements K. S. Maksimov Nanotechnology 17 December 2009 Pages: 1725 - 1727
A linear temperature probe with a low power supply voltage V. V. EnnsYu. M. KobzevV. I. Enns Microsystems 17 December 2009 Pages: 1728 - 1731
Study of the effect of surface modification of microcantilevers on their frequency properties V. D. VernerG. N. GaidukovP. S. Pagin Measurement Techniques 17 December 2009 Pages: 1732 - 1736
Reliability of diagnostic methods based on low-frequency noise analysis M. I. GorlovD. Yu. SmirnovN. N. Koz’yakov Measurement Techniques 17 December 2009 Pages: 1737 - 1741