Abstract
The specific aspects of SiGe:C HBT process and device simulation using TCAD are discussed. Cut-off frequency f T and collector junction breakdown voltage BV cbo dependences on carbon concentration in SiGe base area are investigated. The boron and carbon profiles in SiGe base are obtained to provide a trade-off between gain, cut-off frequency and break-down voltage. High values of f T × BV cbo product were achieved.
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Original Russian Text © K.O. Petrosjanc, R.A. Torgovnikov, 2009, published in Izvestiya vysshikh uchebnykh zavedenii. Elektronika, 2009, Vol. 43, No. 13.
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Petrosjanc, K.O., Torgovnikov, R.A. fT × BVcbo product modeling for SiGe:C HBTs. Semiconductors 43, 1709–1713 (2009). https://doi.org/10.1134/S106378260913020X
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DOI: https://doi.org/10.1134/S106378260913020X