Artificial GeSi substrates for heteroepitaxy: Achievements and problems Yu. B. BolkhovityanovO. P. PchelyakovS. I. Chikichev Review Pages: 493 - 518
Propagation of nonequilibrium phonons in single-crystal ZnTe T. I. GalkinaA. Yu. KlokovV. V. Zaitsev Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 519 - 522
Magnetooptical oscillations in bismuth at T≥77 K O. V. KondakovK. G. Ivanov Electronic and Optical Properties of Semiconductors Pages: 523 - 525
A local specific feature of variation in the spectrum of picosecond superluminescence upon adding excited carriers to a non-Fermi electron-hole plasma in GaAs N. N. AgeevaI. L. BronevoiS. V. Stegantsov Electronic and Optical Properties of Semiconductors Pages: 526 - 531
Phonon-assisted exciton luminescence in GaN layers grown by MBE and chloride-hydride VPE M. G. TkachmanT. V. ShubinaB. Monemar Electronic and Optical Properties of Semiconductors Pages: 532 - 536
Electronic properties of irradiated semiconductors. A model of the fermi level pinning V. N. BrudnyiS. N. GrinyaevN. G. Kolin Electronic and Optical Properties of Semiconductors Pages: 537 - 545
Relaxation of a defect subsystem in silicon irradiated with high-energy heavy ions S. A. SmagulovaI. V. AntonovaV. A. Skuratov Electronic and Optical Properties of Semiconductors Pages: 546 - 550
Diffusion of europium in silicon D. É. Nazyrov Electronic and Optical Properties of Semiconductors Pages: 551 - 552
Photosensitive structures based on CdGa2Se4 single crystals A. A. VaipolinYu. A. NikolaevN. Fernelius Semiconductor Structures, Interfaces, and Surfaces Pages: 553 - 558
Structural and optical properties of InAs quantum dots in AlGaAs matrix D. S. SizovYu. B. SamsonenkoN. N. Ledentsov Low-Dimensional Systems Pages: 559 - 563
Model of multi-island single-electron arrays based on the Monte Carlo method I. I. AbramovS. A. IgnatenkoE. G. Novik Low-Dimensional Systems Pages: 564 - 568
Dispersion of the relaxation time of quasi-two-dimensional electrons under conditions of ionized-impurity scattering in a superlattice with doped quantum wells S. I. Borisenko Low-Dimensional Systems Pages: 569 - 572
Electronic and optical properties of AlAs/AlxGa1−x As(110) superlattices G. F. KaravaevV. N. ChernyshovR. M. Egunov Low-Dimensional Systems Pages: 573 - 580
Photoluminescence study of AlGaAs/GaAs/AlGaAs double quantum wells separated by a thin AlAs layer G. B. GalievM. V. KarachevtsevaN. G. Yaremenko Low-Dimensional Systems Pages: 581 - 585
Electron heating by a strong longitudinal electric field in quantum wells L. E. Vorob’evS. N. DanilovD. A. Firsov Low-Dimensional Systems Pages: 586 - 593
Semi-insulating silicon carbide layers obtained by diffusion of vanadium into porous 4H-SiC M. G. MynbaevaA. A. Lavrent’evA. A. Lebedev Amorphous, Vitreous, and Porous Semiconductors Pages: 594 - 597
Quantum-chemical simulation of the influence of defects on the infrared spectrum and the electronic structure of a-Se A. S. ZyubinF. V. Grigor’evS. A. Dembovskii Amorphous, Vitreous, and Porous Semiconductors Pages: 598 - 603
Phase transformations initiated in thin layers of amorphous silicon by nanosecond excimer laser pulses G. D. IvlevE. I. Gatskevich Amorphous, Vitreous, and Porous Semiconductors Pages: 604 - 610
Detection of hydrogen impurity in silicon radiation detectors L. F. MakarenkoF. P. KorshunovN. I. Zamyatin Physics of Semiconductor Devices Pages: 611 - 615