Abstract
The behavior of silicon particle detectors irradiated with 2.5-MeV electrons during subsequent annealing is studied. Annealing at 100–250°C was found to result in the formation of two types of traps with the levels E c −0.32 eV and E v+0.29 eV. Increasing the annealing temperature to 300°C makes both traps disappear. On the basis of data obtained, it was concluded that these traps are related to hydrogen-containing complexes. The presence of hydrogen in a crystal results in a decrease in the annealing temperature for vacancy-oxygen (VO) complexes and complexes consisting of carbon and oxygen interstitials (CiOi). The reason for this phenomenon is the passivation of these complexes by hydrogen, which results in the formation of electrically active VOH centers {with the level E c −0.32 eV} in an intermediate stage of this process. It is assumed that hydrogen penetrates the structures under investigation in one of the stages of their fabrication.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 5, 2003, pp. 629–633.
Original Russian Text Copyright © 2003 by Makarenko, Korshunov, Lastovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Zamyatin.
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Makarenko, L.F., Korshunov, F.P., Lastovskii, S.B. et al. Detection of hydrogen impurity in silicon radiation detectors. Semiconductors 37, 611–615 (2003). https://doi.org/10.1134/1.1575370
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DOI: https://doi.org/10.1134/1.1575370