Abstract
Structural and optical properties of InAs quantum dots (QDs) grown in a wide-bandgap Al0.3Ga0.7As matrix is studied. It is shown that a high temperature stability of optical properties can be achieved owing to deep localization of carriers in a matrix whose band gap is wider than that in GaAs. Specific features of QD formation were studied for different amounts of deposited InAs. A steady red shift of the QD emission peak as far as ∼1.18 µm with the effective thickness of InAs in Al0.3Ga0.7As increasing was observed at room temperature. This made it possible to achieve a much higher energy of exciton localization than for QDs in a GaAs matrix. To obtain the maximum localization energy, the QD sheet was overgrown with an InGaAs layer. The possibility of reaching the emission wavelength of ~1.3 µm is demonstrated.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 5, 2003, pp. 578–582.
Original Russian Text Copyright © 2003 by Sizov, Samsonenko, Tsyrlin, Polyakov, Egorov, Tonkikh, Zhukov, Mikhrin, Vasil’ev, Musikhin, Tsatsul’nikov, Ustinov, Ledentsov.
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Sizov, D.S., Samsonenko, Y.B., Tsyrlin, G.E. et al. Structural and optical properties of InAs quantum dots in AlGaAs matrix. Semiconductors 37, 559–563 (2003). https://doi.org/10.1134/1.1575361
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DOI: https://doi.org/10.1134/1.1575361