Abstract
Photosensitive structures based on CdGa2Se4 single crystals have been fabricated for the first time: In/CdGa2Se4 surface-barrier structures and InSe/CdGa2Se4 heterostructures. The current-voltage characteristics and the quantum efficiency spectra of these structures were studied. The polarization photosensitivity of In/CdGa2Se4 structures were found. The photosensitivity is discussed taking into account the photoactive absorption in CdGa2Se4 crystals in the impurity-related and intrinsic spectral ranges. A conclusion has been made that CdGa2Se4 single crystals are promising for commercial applications in photoelectric converters of unpolarized and linearly polarized light.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 5, 2003, pp. 572–577.
Original Russian Text Copyright © 2003 by Va\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)polin, Nikolaev, Polushina, V. Yu. Rud’, Yu. V. Rud’, Terukov, Fernelius.
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Vaipolin, A.A., Nikolaev, Y.A., Polushina, I.K. et al. Photosensitive structures based on CdGa2Se4 single crystals. Semiconductors 37, 553–558 (2003). https://doi.org/10.1134/1.1575360
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DOI: https://doi.org/10.1134/1.1575360