Overview
- Most advanced and comprehensive book on high permittivity gate dielectrics
- Covers the basics, latest developments, and applications
- A reference work for researchers, electrical engineers and materials scientists as well as a study text for master and doctor course students
- Includes supplementary material: sn.pub/extras
Part of the book series: Springer Series in Advanced Microelectronics (MICROELECTR., volume 43)
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About this book
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."
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Keywords
Table of contents (12 chapters)
Editors and Affiliations
About the editor
Samares Kar was born in Kolkata, India in 1942. He received the B.Tech. degree in electrical engineering in 1962 from the Indian Institute of Technology in Kharagpur, India, and the M.S. and Ph.D. degrees in electrical engineering from Lehigh University in Bethlehem, Pennsylvania, USA in 1968 and 1970, respectively.
During the period 1963-1965, he worked in West Germany, first as a design engineer with the Hamburger Transformatorenbau in Hamburg, and then as a project engineer with the Continental Elektroindustrie in Rheydt. During the period 1971-1974, he was a member of the scientific staff at the Fraunhofer Institute of Applied Solid State Physics in Freiburg, West Germany. In 1975, he joined the Indian Institute of Technology in Kanpur, where he was a professor of electrical engineering and materials science from 1980 till 2004, an emeritus fellow between 2004 and 2006, and currently is an R & D consultant. In 1979, he was at The Pennsylvania State University, University Park, Pennsylvania as a visiting associate professor of engineering science, and in 1981, he was at Lehigh University, Bethlehem as a visiting professor of electrical engineering. His research interests have included MOS tunnel devices, Si-SiO2 interface states, solar cells, ion-beam induced defects, organic monolayers, high-K gate dielectrics, and MOS/MIS parameter extraction. His seminal work on ultrathin (2-4 nm) SiO2 gate dielectrics, carried out more than three decades ago, provides some basic theory and tools for the current and future generation MOS nano-transistors, in particular, on issues related to the ultimate gate dielectric thinness, electrical characterization, and metal-related interface states.
Dr. Kar was/is the lead organizer of The First, Second, Third, Fourth, and Fifth International Symposium on High Dielectric Constant Materials held respectively in October 2002 in Salt Lake City, UT, in October 2003 in Orlando, FL, in October 2005 in Los Angeles, CA., in October 2006 in Cancun, Mexico, and in October 2007 in Washington, DC. He is the lead editor of the four volumes of the book entitled "Physics and Technology of High-K Gate Dielectrics".
Bibliographic Information
Book Title: High Permittivity Gate Dielectric Materials
Editors: Samares Kar
Series Title: Springer Series in Advanced Microelectronics
DOI: https://doi.org/10.1007/978-3-642-36535-5
Publisher: Springer Berlin, Heidelberg
eBook Packages: Engineering, Engineering (R0)
Copyright Information: Springer-Verlag Berlin Heidelberg 2013
Hardcover ISBN: 978-3-642-36534-8Published: 08 July 2013
Softcover ISBN: 978-3-662-50138-2Published: 23 August 2016
eBook ISBN: 978-3-642-36535-5Published: 25 June 2013
Series ISSN: 1437-0387
Series E-ISSN: 2197-6643
Edition Number: 1
Number of Pages: XXXII, 489
Number of Illustrations: 157 b/w illustrations, 168 illustrations in colour
Topics: Electronics and Microelectronics, Instrumentation, Optical and Electronic Materials, Solid State Physics, Spectroscopy and Microscopy, Engineering, general