Abstract
The tradeoffs involved in alternative processes for the formation of ultra shallow junctions are described. Low energy implantation, preamorphization to eliminate channeling and low thermal budget processing are adequate to form junctions that are 0.1 to 0.3μm deep. For junctions less than about 100 nm, however, the enhanced diffusion resulting from the amorphization implant reduces its benefits. Athermal diffusion can result in considerable junction motion even when low thermal budget processing is used. Junctions this shallow typically require silicide or metal cladding to reduce the sheet resistance; however, the dopant redistribution associated with siliciding pre-existing junctions increases the contact resistance which diminishes the potential benefit of silicidation. In addition, high leakage can result from excessive silicon consumption. While the use of silicide as a diffusion source can overcome some of the limitations of silicided junctions, this technique can be especially hindered by slow dopant diffusion or compound formation in the silicide and by the limited thermal stability of the silicide. One outstanding issue associated with silicide diffusion sources is understanding the seemingly enhanced diffusivity of dopant in the silicon.
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C. M. Osburn and A. Reisman, J. Electron. Mater.16, 223 (1987).
Y. Kim, H. Z. Massoud, and R. B. Fair, J. Electron. Mater.18, 143 (1989).
K. K. Ng and W. T. Lynch, IEEE Trans. Electron Dev.Ed-34, 503 (1987).
D. Sharma, S. Goodwin-Johansson, D. S. Wen, C. K. Kim, and C. M. Osburn, Proc. of First Int. Symp. on Ultra Large Scale Integration Sci. and Tech., The Electrochem. Soc.,87-11, 49 (1987).
S. Goodwin-Johansson and M. Kellam, private communications.
T. Shibata, K. Hieda, M. Sato, M. Konaka, R. L. M. Dang, and H. Iizuka, IEDM Tech. Digest, 647 (1981).
C. M. Osburn, M. Y. Tsai, S. Roberts, C. J. Lucchese, and C. Y. Ting, Proc. 1st Int. Symp. on VLSI Sci. and Tech., Electrochemical Society,82-1, 213 (1982).
C. K. Lau, Y. C. See, D. B. Scott, J. M. Bridges, S. M. Perna, and R. D. Davies, IEDM Tech. Digest, 714 (1982).
F. Runovc, H. Norstrom, R. Buchta, P. Woklund, and S. Petersson, Physica Scripta,26, 108 (1982).
T. Yamaguchi, S. Morimoto, G. H. Kawamoto, H. K. Park and G. C. Eiden, IEDM Tech. Digest, 522 (1983).
K. Maex, R. DeKeersmaecker, P. F. A. Alkemade, F. H. P. M. Habraken, and W. F. van der Weg, Proc. MRS Europe Conference, 315, June (1984).
K. Tsukamoto. T. Okamoto, M. Shimizu, T. Matsukawa, and H. Nakata, IEDM Tech. Digest, 130 (1984).
D. C. Chen, T. R. Cass, J. E. Turner, P. Merchant, and K. Y. Chiu, IEDM Tech. Digest, 411 (1985).
D. C. Chen, T. R. Cass, J. E. Turner, P. Merchant, and K. Y. Chiu, IEEE Trans. Electron Devices,ED-33, 1463 (1986).
M. E. Alperin, T. C. Holloway, R. A. Haken, C. D. Gosmeyer, R. V. Karnaugh, and W. D. Parmantie, IEEE J. Solid State Circuits,SC-20, 61 (1985).
J. Amano, K. Mauka, M. P. Scott, and J. E. Turner, Appl. Phys. Lett.,49, 737 (1986).
I. Ohdomari, K. Takano, T. Chikyow, H. Kawarada, J. Nakanishi, and T. Ueno, M. R. S. Symp. Proc.54, 63 (1986).
K. Maex, R. de Keersmaecker, C. Claeys, J. Vanhellemont, and P. F. A. Alkemade, Proc. of the 5th Inter. Symp. on Silicon Mater. Sci. and Tech., The Electrochem. Soc.86-4, 346 (1986).
S. M. Hu, Appl. Phys. Lett.51, 308 (1987).
D. S. Wen, P. L. Smith, C. M. Osburn, and G. A. Rozgonyi, Appl. Phys. Lett,51, 1182 (1987).
D. S. Wen, P. L. Smith, C. M. Osburn, and G. A. Rozgonyi, J. Electrochem. Soc.,136, 466 (1989).
M. H. Wang, W. Lur, H. C. Cheng, and L. J. Chen, MRS Symp. Proc.100, 93 (1988).
K. Maex and R. DeKeersmaecker, Proc. 14th ESSDERC, Sept. (1984).
K. Maex, R. F. DeKeersmaecker, and P. F. A. Alkemade, MRS Symp. Proc.45, 153 (1985).
F. C. Shone, K. C. Saraswat, and J. D. Plummer, IEDM Tech. Dig., 407 (1985).
D. L. Kwong, D. C. Meyers, and N. S. Alvi, IEEE Electron Dev. Lett.,EDL-6, 244 (1985).
D. L. Kwong, Y. H. Ku, S. K. Lee, and E. Lewis, J. Appl. Phys.61, 5084 (1987).
H. Gierisch, F. Neppl, E. Franzel, P. Eichinger, and K. Hieber, Proc. MRS Symp., Spring, Palo Alto CA (1986).
R. Liu and T. P. H. F. Wendling, Workshop on Refractory Metals and silicides for VLSI IV, San Juan Bautista, CA May (1986).
R. Liu, D. S. Williams, and W. T. Lynch, IEDM Technical Digest 58, (1986).
R. Liu, D. S. Williams, and W. T. Lynch, J. Appl. Phys.63 1990 (1988).
S. J. Hillenius, R. Liu, G. E. Georgiou, R. L. Field, D. S. Williams, A. Komblit, D. M. Boulin, R. L. Johnston, and W. T. Lynch, IEDM Tech. Digest, 252 (1986).
N. Natsuaki, K. Ohyu, T. Suzuki, N. Kobayashi, N. Hashimoto, and Y. Wada, IEEE 1986 Symp. VLSI Tech., 37 (1986).
N. Kobayashi, N. Hashimoto, K. Ohyu, T. Kaga, and S. Iwata, IEEE 1986 Symp. VLSI Tech., 49 (1986).
B. M. Ditchek, M. Tabasky, and E. S. Bulat, MRS Symp. Proc.92, 199 (1987).
J. D. Plummer, Workshop on Refractory Metals and silicides for VLSI V, San Juan Bautista, CA, May (1987).
V. Probst, P. Lippens, L. Van den Hove, K. Maex, H. Schaber, and R. DeKeersmaecker, Proc. 17th ESSDERC, 437, Bologna, Italy, Sept. (1987).
R. Liu, F. A. Baiocchi, L. M. Heimbrook, J. Kovalchick, D. L. Malm, D. S. Williams, and W. T. Lynch, Proc. of First Int. Symp. on Ultra Large Scale Integration Sci. and Tech., The Electrochem. Soc.87-11, 446 (1987).
Y. Taur, B. Davari, D. Moy, J. Y.-C. Sun, and C. Y. Ting, IBM J. Res. Develop.31, 627 (1987).
B. Davari, Y. Taur, D. Moy, F. M. d’Heurle, and C. Y. Ting, Proc. of First Int. Symp. on Ultra Large Scale Integration Sci. and Tech., The Electrochem. Soc.87-11, 368 (1987).
Y.-H. Ku, Ph.D Thesis, University of Texas/Austin, May (1988).
P. B. Moynagh, A. A. Brown, and P. J. Rosser, J. Phys.C4, 187 (1988).
L. Van den Hove, Ph.D. Thesis, Katholieke Universiteit Leuven, June (1988).
D. X. Cao, H. B. Harrison, and G. K. Reeves, MRS Symp. Proc.100, 737 (1988).
L. M. Rubin, N. Herbots, D. Hoffman, and D. Ma, Proc. MRS Symp., Dec. (1988).
P. B. Moynagh, A. A. Brown, and P. J. Rosser, Proc. MRS Symp., Spring, San Diego (1989).
H. Jiang, P. Smith, D. Griffis, Z.-G. Xiao, C. M. Osburn, G. McGuire, and G. A. Rozgonyi, presented at Electrochem. Soc. Annual Meeting, Los Angeles, CA., May (1989).
S. Nygren and S. Johansson, submitted to J. Appl. Phys.
L. Van den hove, P. Lippins, K. Maex, L. Hobbs, and R. DeKeersmaecker, European Workshop on Refractory Metals and silicides, Leuven, Belgium,A.2.2, April (1989).
N. F. Stogdale and K. J. Barlow, European Workshop on Refractory Metals and silicides, Leuven, Belgium,A.2.6, April (1989).
E. A. Maydell-Ondrusz, R. E. Harper, I. H. Wilson, and K. G. Stephens, Vacuum.34, 995 (1984).
O. W. Holland, D. Fathy, S. P. Withrow, and T. P. Sjoreen, J. Vac. Sci. Technol. B6, 569 (1988).
K. Cho, W. R. Allen, T. G. Finstad, W. K. Chu, J. Liu, and J. J. Wortman, Nucl. Instrm. Methods Phys. Res. B7/8, 265 (1985).
B-Y. Tsaur and C. H. Anderson, Jr., J. Appl. Phys.54, 6336 (1983).
I. D. Calder, H. M. Naguib, D. Houghton, and F. R. Shepherd, Mater. Res. Soc. Symp. Proc. 35, 353 (1985).
D. K. Sadana, W. Maszara, J. J. Wortman, G. A. Rozgonyi, and W. K. Chu, J. Electrochem. Soc.131, 943 (1984).
M. Delfino, D. K. Sadana, and A. E. Morgan, Appl. Phys. Lett.49, 575 (1986).
E. Ganin, G. Scilla, T. O. Sedgwick, and G. A. Sai-Halasz, Ext. Abstract, M.R.S. Fall Meeting, 50 (1986).
J. Liu, J. Wortman, and R. Fair, Digest of the 41st Annual IEEE Res. Conf. June (1985).
A. A. Naem and I. D. Calder, J. Appl. Phys.62, 569 (1987).
I.-W Wu, R. T. Fulks, and J. C. Mikkelsen, Jr., J. Appl. Phys.60, 2422 (1986).
P. K. Vasudev, A. E. Schmidtz, and G. L. Olson, MRS Symp. Proc.35, 367 (1984).
R. G. Wilson, J. Appl. Phys.,54, 6879 (1983).
M. C. Ozturk, J. J. Wortman, A. Ajmera, and G. Rozgonyi, Abstract Mater. Res. Soc. Spring Mg., 48 (1987).
A. Ajmera and G. Rozgonyi, Appl. Phys. Lett.49,1269 (1986).
M. C. Ozturk, J. J. Wortman, C. M. Osburn, A. Ajmera, G. Rozgonyi, E. Frey, W. K. Chu, and C. Lee, IEEE Trans. Electron Dev.35, 659 (1988).
S. D. Brotherton, J. R. Ayres, J. B. Clegg, and J. P. Gowers, J. Electron. Mater.18, 173 (1989).
M. Miyake, S. Aoyama, S. Hirota, and T. Kobayashi, J. Electrochem. Soc.135, 2872 (1988).
S. Chevacharoenkul, C. M. Osburn, and G. McGuire, in preparation.
R. B. Fair, “PREDICT: Process Estimator for the Design of Integrated Circuit Technologies,” Microelectronics Center of North Carolina, (1986).
S.-N. Hong, G. A. Ruggles, J. J. Wortman, E. Myers, and J. J. Hren, submitted to Electron. Lett. (1989).
Y. Oowaki, Y. Itoh, M. Momodomi, F. Horiguchi, S. Watanabe, M. Ogura, and H. Nishimura, IEDM Dig. Tech. Papers. 492 (1985).
R. W. Gregor, IEEE Electron Devices Lett.EDL-7, 677 (1986).
T. Y. Chan, A. T. Wu, P. K. Ko, C. Hu, and R. R. Razouk, IEEE Electron Devices Lett.EDL-7, 16 (1986).
T. Y. Chan, A. T. Wu, P. K. Ko, and C. Hu, IEEE Electron Devices Lett.EDL-8, 326 (1987).
D. S. Wen, Ph.D. Thesis, North Carolina State University, May (1988).
M. Nakano, Electrochem. Soc.89-, 123 (1989).
D. S. Wen, S. Goodwin-Johansson, and C. M. Osburn, IEEE Trans. on Elec. Dev.35, 1107 (1988).
S. Ogura, P. Tsang, W. Walker, D. Critchlow, and J. Shepard, IEEE Trans. Electron Devices,ED-27, 1359 (1980).
P. J. Tsang, S. Ogura, W. W. Walker, J. F. Shepard, and D. Critchlow, IEEE Trans. Electron DevicesED-29, 590 (1982).
J. Riseman, U.S. Patent 4234362 (1980).
J. J. Sanchez, K. K. Hsueh, and T. A. DeMassa, IEEE Trans. Electron DevicesED-36, 1125 (1989).
M. C. Ozturk, Ph.D. Thesis, North Carolina State University, (1988).
C. M. Osburn, S. Chevacharoenkul, G. McGuire, J. Fulghum, and D. Griffis, in preparation.
R. B. Fair, “Diffusion and Oxidation of Silicon,” inMicroelectronics Processing, eds. D. W. Hess and K. F. Jensen, Adv. in Chem. Series 221 (American Chemical Society), 265 (1989).
B. Hamilton, T. O. Sedgwick, and J. C. Gelpey, MRS Soc. Symp. Proc.100, 323 (1988).
J. Chen, T. Y. Chan, I. C. Chen, P. K. Ko, and C. Hu, IEEE Elec. Dev. Lett.EDL-8, 515 (1987).
T. Y. Chan, J. Chen, P. K. Ko and C. Hu, Tech. Digest IEDM, 718 (1987).
C. Chang and J. Lien, Tech. Digest IEDM, 714 (1987).
C. M. Osburn, A. Cramer, A. M. Schwieghart, and M. R. Wordeman, Proc. of First Int. Symp. on Very Large Scale Integration Sci. Tech., The Electrochem. Soc.82-7, 354 Detroit (1982).
D. Flowers, J. Electrochem. Soc.134, 698 (1987).
H. L. Peek, and D. Wolters, Ext. Abs. 18th Conf. Solid State Devices and Mater. 487, Tokyo (1986).
H. L. Peek, and J. F. Verwey, Insulating Films on Semiconductors, eds. J. J. Simone, and J. Buxo, Elsevier Science Publishers B. V., North Holland, (1986).
M. Stinson and C. Osburn, unpublished.
M. Lenzlinger and E. H. Snow, J. Appl. Phys.,40, 278 (1969).
M. Stinson and C. M. Osburn, unpublished.
P. E. Bakeman and A. F. Puttlitz, Nuclear Instrum. Methods Phys. Res.B6, 399 (1085).
V. Basra, C. M. McKenna, and S. B. Felch, Nuclear Instrum. Methods Phys. Res.B21, 360 (1987).
S. B. Felch, V. Basra, and C. M. McKenna, IEEE Trans. Electron Devices.ED-35, 2338 (1988).
W. Vandervorst, H. E. Maes, and R. F. DeKeersmaecker, J. Appl. Phys.56, 1425 (1984).
D. J. Godfrey, R. D. Groves, M. G. Dowsett, and A. F. W. Willoughby, Physica129B, 181 (1985).
J. E. Turner and J. Amano, Appl. Phys. Lett.50, 1601 (1987).
S. Clayton, B. Offord, T. Sedgwick, R. Reedy, A. Michel, and G. Scilla, Electron. Lett.24, 831 (1988).
A. Casel and H. Jorke, Appl. Phys. Lett.50, 989 (1987).
J. B. Clegg, Surf. Interface Analysis10, 332 (1987).
H. H. Anderson, App. Phys.18, 131 (1979).
H. Frenzel, E. Frenzel, and P. Davies, Springer Series in Chemical Physics: SIMS V, ed. A. Benninghover, R. J. Cotton, D. S. Simons, and H. W. Werner44, 316, (1989).
J. L. Hunter, Jr., S. F. Corcoran, D. P. Griffis, and C. M. Osburn, Am. Vac. Soc, 36th Nat. Symp., Oct. (1989).
J. J. Lee, J. E. Fulghum, G. E. McGuire, M. A. Ray, C. M. Osburn, and R. W. Linton, Am. Vac. Soc, 36th Nat. Symp., Oct. (1989).
S. M. Hu, J. Appl. Phys.53, 1499 (1982).
G. G. Sweeney, and T. R. Alvarez inEmerging Semiconductor Technology ed. by D. C. Gupta and P. A. Langer, Am. Soc. T. Mater.STP 960, 521 (1986).
J. R. Ehrestein inEmerging Semiconductor Technology ed. by D. C. Gupta and P. A. Langer, Am. Soc. T. Mater.STP 960, 453 (1986).
J. Albers inEmerging Semiconductor Technology ed. by D. C. Gupta and P. A. Langer, Am. Soc. T. Mater.STP 960, 480 (1986).
M. Pawlik inEmerging Semiconductor Technology ed. by D. C. Gupta and P. A. Langer, Am. Soc. T. Mater.STP 960, 502 (1986).
C. M. Osburn, T. Brat, D. Sharma, N. Parikh, W.-K. Chu, D. Griffis, S. Corcoran, and S. Lin, J. Electrochem. Soc.135, 1490 (1988).
P. Fahey and R. W. Dutton, Appl. Phys. Lett.52, 1092 (1988).
L. Van den Hove, J. Vanhellemont, R. Wolters, W. Classen, R. DeKeersmaecker, and G. Declerk, Proc. of First Int. Symp. on Adv. Mater, for ULSI, Electrochem. Soc.88-19, 165 (1988).
C. M. Osburn, P. Smith, D.-S Wen, G. McGuire, S. Chevacharoenkul, and J.-B Yan, M.R.S. Mtg., Dec. (1989).
E. K. Broadbent, R. Irani, and A. E. Morgan, Proc. IEEE V-MIC, 175 (1988).
E. K. Broadbent, M. Delfino, A. E. Morgan, D. K. Sadana, and P. Maillot, IEEE Electron Device Lett.EDL-6, 318 (1987).
M. Wittmer, C.-Y. Ting, I. Ohdonari, and K. N. Tu, J. Appl. Phys.53, 6781 (1982).
Z.-G Xiao, H. Jiang, J. Honeycutt, G. Rozgonyi, C. M. Osburn, and G. McGuire, presented at Electrochem. Soc. Annual Mtg., Los Angeles, CA, May (1989).
C. Y. Ting, F. M. d’Heurle, S. S. Iyer, and P. M. Fryer, J. Electrochem. Soc.133, 2621 (1986).
C. Y. Ting and S. S. Iyer, Proc. IEEE V-MIC, 307 (1985).
C. Y. Wong, L. K. Wang, and P. A. McFarland, J. Electrochem, Soc, Ext. Abs.85, 466 (1985).
L. R. Zheng, L. S. Hung, and J. W. Mayer, Appl. Phys. Lett.41, 646 (1982).
M. Y. Tsai, C. S. Petersson, F. M. d’Heurle and V. Maniscalco, Appl. Phys. Lett.37, 295 (1980).
F. M. d’Heurle, C. S. Petersson, and M. Y. Tasi, J. Appl. Phys.51, 5976 (1980).
F. M. d’Heurle, M. Y. Tasi, C. S. Petersson, and B. Stritzker, J. Appl. Phys.53, 3069 (1982).
L. S. Wielunski, C. D. Lien, B. X. Liu, and M.-A. Nicolet, J. Vac. Sci. Technol.20, 182 (1982).
A. H. Hamdi and M.-A Nicolet, Thin Solid Films119, 357 (1984).
H. Okabayashi, M. Morimoto, and E. Nagasawa, IEEE Trans. Electron DevicesED-31, 1329 (1984).
B. Y. Tsaur, C. K. Chen, C. H. Anderson, Jr., and D. L. Kwong, J. Appl. Phys., submitted.
M. Delfino, E. K. Broadbent, A. E. Morgan, B. J. Burrow, and M. H. Norcott, IEEE Electron Device Lett.EDL-6, 591 (1985).
D. L. Kwong, D. C. Meyers, and N. S. Alvi, 2nd Int. Symp. on VLSI Science and Technol., Electrochem. Soc.85, 195 (1985).
D. L. Kwong, D. C. Meyers, and N. S. Alvi, IEEE Electron Device Lett.EDL-6, 244 (1985).
D. L. Kwong, D. C. Meyers, N. S. Alvi, L. W. Li, and E. Norbeck, Appl. Phys. Lett.47, 688 (1985).
L. R. Zheng, L. S. Hung, J. W. Mayer, and K. W. Choi, Nucl. Instrum. Methods Phys. Res.B7/8, 413 (1985).
K. Maex, L. Van den Hove, and R. F. der Keersmaecker, Thin Solid Films140, 149 (1986).
D. L. Kwong and N. S. Alvi, J. Appl. Phys.60, 688 (1986).
N. Yu, Z. Zhou, W. Zhou, S. Tsou, and D. Zhu, Nucl. Instrum. Methods Phys. Res.B19/20, 427 (1987).
A. E. Morgan, E. K. Broadbent, M. Delfinio, B. Coulman, and D. K. Sadana, J. Electrochem. Soc.134, 925 (1987).
E. Nagasawa, H. Okabayashi, and M. Morimoto, IEEE Trans. Electron DevicesED-34, 581 (1987).
H. Jiang, C. M. Osburn, Z.-G. Xiao, G. A. Rozgonyi, G. McGuire, ESSDERC, Berlin W. Germany, Sept (1989).
H. J. Bohm, H. Wendt, and H. Oppolzer, K. Masseli, and R. Kassing, J. Appl. Phys.62, 2784 (1987).
M. Delfino, J. G. de Groot, K. N. Ritz, and P. Maillot, J. Electrochem. Soc.136, 215 (1989).
D. E. Burke and S.-Y. Yung, to be published Solid-State Electron., (1988).
M. Delfino, A. E. Morgan, P. Maillot, E. K. Broadbent, J. Appl. Phys.64, 607 (1988).
H. Ishiwara,Thin Film Interfaces and Interactions, ed. by J. E. E. Baglin and J. M. Poate, The Electrochem. Soc, 159 (1980).
P. Gas, V. Deline, F. M. d’Heurle, A. Michel, and G. Scilla, J. Appl. Phys.60, 1634 (1986).
O. Thomas, P. Gas, F. M. d’Heurle, F. G. LeFoues, A Michel, and G. Scilla, J. Vac. Sci. Technol. A6, 1736 (1988).
O. Thomas, P. Gas, A. Charai, F. K. LeGoues, A. Michel, G. Scilla and F. M. d’Heurle, J. Appl. Phys.64, 2973 (1988).
A. H. van Ommen, H. J. W. van Houtum, and A. M. L. Theunissen, J. Appl. Phys.60, 627 (1986).
J. Amano, P. Merchant, T. R. Cass, J. N. Miller, and T. Koch, J. Appl. Phys.59, 2689 (1986).
J. Narayan, T. A. Stephenson, T. Brat, D. Fathy, and S. J. Pennycook, J. Appl. Phys.60, 631 (1986).
F. J. Morin and J. P. Maita, Phys. Rev.94, 1525 (1954).
R. B. Fair, J. Appl. Phys.43, 1278 (1972).
M. Arienzo, private communication.
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Osburn, C.M. Formation of silicided, ultra-shallow junctions using low thermal budget processing. J. Electron. Mater. 19, 67–88 (1990). https://doi.org/10.1007/BF02655553
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DOI: https://doi.org/10.1007/BF02655553