Abstract
Low-thermal-budget annealing of ion-implanted BF +2 , P, and As in Si was studied for shallow-junction formation. Implant doses were sufficient to amorphize the silicon surface region. Low-temperature furnace annealing and rapid-thermal annealing of ionimplanted boron, phosphorus and arsenic in silicon exhibit a transient enhanced diffusion regime resulting injunction depths considerably deeper than expected. The origin of this transient enhanced diffusion is the annealing of ion-implantation damage in the silicon substrate. We have found that point-defect generation during the annealing of either shallow end-of-range damage or small clusters of point defects dominates the transient enhanced diffusion process depending upon the annealing temperature and time. The net effect of damage annealing is to reduce the activation energy for dopant diffusion by an amount equal to the activation energy of the supersaturation of point defects in silicon. Models which can describe the transient enhancement characteristics in dopant diffusion during both furnace and rapid-thermal annealing of these implants are discussed.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
M. C. Ozturk and J. J. Wortman, Appl. Phys. Lett.52, 281 (1988).
Y. El-Mansy, IEEE Trans. Electron DevicesED-29, 567 (1982).
H. Müller, H. Ryssel and I. Ruge, inIon Implantation in Semiconductor, edited by I. Ruge and J. Graul, p. 85, Spring Verlag, Berlin, 1971.
N. C. Tung, J. Electrochem. Soc.132, 914 (1985).
D. E. Davies, IEEE Electron. Dev. Lett.,6, 397 (1985).
T. O. Sedgwick, Mater. Res. Soc. Symp. Proc.71, 403 (1986).
B. L. Crowder, J. F. Ziegler and G. W. Cole, inIon Implantation in Semiconductors and Other Materials, edited by B. L. Crowder, p. 257, Plenum, New York, 1973.
R. Kwor, D. L. Kwong and Y. K. Yeo, Appl. Phys. Lett.45, 77 (1984).
J. B. Lasky, J. Appl. Phys.54, 6009 (1983).
T. O. Sedgwick, R. Kalish, S. R. Mader and S. C. Shatas, Mat. Res. Soc. Symp. Proc.23, 293 (1984).
W. K. Hofker, H. W. Werner, D. P. Oosthoek and H. A. M. de Grefte, Appl. Phys.2, 265 (1973).
R. T. Hodgson, V. R. Deline, S. M. Mader and J. C. Gelpey, Appl. Phys. Lett.44, 589 (1984).
T. O. Sedgwick, J. Electrochem. Soc.130, 484 (1983).
M. Miyake and S. Aoyama, J. Appl. Phys.63, 1754 (1988).
M. Servidori, R. Angelucci, F. Cembali, P. Negrini, S. Solmi, P. Zaumseil, and U. Winter, J. Appl. Phys.61, 1834 (1987).
S. J. Pennycook, J. Narayan and O. W. Holland, J. Electrochem. Soc.132, 1962 (1985).
A. E. Michel, W. Rausch, P. A. Ronsheim and R. H. Kastl, Appl. Phys. Lett.50, 416 (1987).
R. B. Fair, IEEE Trans. Electron Devices ED-35, 285 (1988).
D. A. Antoniadis, A. M. Lin and R. W. Dutton, Appl. Phys. Lett.33, 1030 (1978).
S. Mizuo and H. Higuchi, Jpn. J. Appl. Phys.20, 739 (1981).
R. M. Harris and D. A. Antoniadis, Appl. Phys. Lett.43, 937 (1983).
S. Solmi, R. Angelucci, F. Cembali, M. Servidori, and M. Anderle, Appl. Phys. Lett.51, 331 (1987).
K. S. Jones, S. Prussin, and E. R. Weber, J. Appl. Phys.62 4114 (1987).
T. O. Sedgwick, A. E. Michel, V. R. Deline, S. A. Cohen and J. B. Lasky, J. Appl. Phys.63, 1452 (1988).
A. M. Mazzone, Phys. Status Solidi (A)95, 149 (1986).
M. Servidori, P. Zaumseil, U. Winter, F. Cembali and A. M. Mazzone, Nucl. Inst. Methods Phy. Res. B.22, 497 (1987).
R. B. Fair, Abstract No. 194, Extended Abstracts of the Spring Meeting of the Electrochemical Society, Vol. 88-1, p. 303, The Electrochemical Society, Pennington, New Jersey, 1988.
T. E. Seidel, D. J. Lischner, C. S. Pai, R. V. Knoell, D. M. Maher and D. C. Jacobson, Nucl. Inst. Methods Phys. Res. B7/8, 251 (1985).
T. E. Seidel and A. U. MacRae, Rad. Effects7, 1 (1973).
Y. Kim, H. Z. Massoud and R. B. Fair, Appl. Phys. Lett.53, 2197 (1988).
J. F. Gibbons, E. O. Hechtl and T. Tsurushima, Appl. Phys. Lett.15, 117 (1969).
D. Fan, J. Huang, R. J. Jaccodine, P. Kahora and F. Stevie, Appl. Phys. Lett.50, 1745 (1987).
T. Y. Tan, Phil. Mag. A44, 101 (1981).
S. Prussin and K. S. Jones, Abstract No. 176, Extended Abstracts of the Spring Meeting of the Electrochemical Society, Vol. 88-1, p. 271, The Electrochemical Society, Pennington, New Jersey, 1988.
R. B. Fair, J. J. Wortman and J. Liu, J. Electrochem. Soc.131, 2387 (1984).
J. D. Verhoeven,Fundamentals of Physical Metallurgy, John Wiley & Sons, Inc., New York, 1975.
J. Narayan and K. Jagannadham, J. Appl. Phys.62, 1694 (1987).
N. R. Wu, P. Ling, D. K. Sadana, J. Washburn and M. I. Current,Defects in Silicon, Electrochemical Society Proceedings Vol. 83, edited by W. M. Bullis and L. C. Kimmerling, p. 363, The Electrochemical Society, Pennington, New Jersey, 1983.
A. C. Ajmera and G. A. Rozgonyi, Appl. Phys. Lett.49, 1269 (1986).
K. Nishi and D. A. Antoniadis, Appl. Phys. Lett.46, 516 (1985).
D. A. Antoniadis, J. Electrochem. Soc.129, 1093 (1982).
R. Angelucci, F. Cembali, P. Negrini, M. Servidori and S. Solmi, J. Electrochem. Soc.134, 3130 (1987).
J. C. C. Tsai, D. G. Schimmel, R. B. Fair and W. Maszara, J. Electrochem. Soc.134, 1508 (1987).
H. Strunk, U. Gösele and B. O. Kolbesen, Appl. Phys. Lett.34, 530 (1979).
S. Prussin and K. S. Jones, Nucl. Inst. Methods Phy. Res. B21, 496 (1987).
K. S. Jones, S. Prussin and E. R. Weber, Nucl. Inst. Methods Phy. Res. B21, 499 (1987).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kim, Y., Massoud, H.Z. & Fair, R.B. The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation. J. Electron. Mater. 18, 143–150 (1989). https://doi.org/10.1007/BF02657400
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02657400