Mg2Si buffer layers on Si(100) prepared by a simple evaporation method G. S. TompaY. B. LiS. K. Hong OriginalPaper Pages: 925 - 929
Magnetic properties of nickel filament polymer-matrix composites Xiaoping ShuiD. D. L. Chung OriginalPaper Pages: 930 - 934
High-performance, transparent conducting oxides based on cadmium stannate T. J. CouttsX. WuJ. M. Webb OriginalPaper Pages: 935 - 943
Highly strained ln0.35Ga0.65As/GaAs layers grown by molecular beam epitaxy for high hole mobility transistors Makoto KudoTomoyoshi MishimaTakuma Tanimoto OriginalPaper Pages: 944 - 947
Molecular beam epitaxial growth of strained AIGalnAs multi-quantum well lasers on InP M. J. MondryE. J. TarsaL. A. Coldren OriginalPaper Pages: 948 - 954
In-situ spectroscopic reflectometry for polycrystalline silicon thin film etch rate determination during reactive ion etchinc Tyrone E. BensonLeonard I. KamletFred L. Terry OriginalPaper Pages: 955 - 964
InP-based multiple quantum well structures grown with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP): Effects of growth interruptions on structural and optical properties A. L. HolmesM. E. HeimbuchS. P. Denbaars OriginalPaper Pages: 965 - 971
Interfacial properties of YBa2Cu3O7−x thin films on AI2O3 substrates prepared by pulsed laser deposition Sang Yeol LeeHyung-Ho Park OriginalPaper Pages: 972 - 975
Thermomechanical deformation of 1 μm thick Cu-polyimide line arrays studied by scanning probe microscopy D. V. ZhmurkinT. S. GrossF. B. Kaufman OriginalPaper Pages: 976 - 982
Thermodynamic assessments of the Sn-In and Sn-Bi binary systems Byeong-Joo LeeChang-Seok OhJae-Hyeok Shim OriginalPaper Pages: 983 - 991
A numerical method for predicting intermetallic layer thickness developed during the formation of solder joints Mathew SchaeferWerner LaubPing S. Lee OriginalPaper Pages: 992 - 1003
A study of parasitic reactions between NH3 and TMGa or TMAI C. H. ChenH. LiuJ. Amano OriginalPaper Pages: 1004 - 1008
Influence of Ga vs As prelayers on GaAs/Ge growth morphology Q. XuJ. W. P. HsuP. J. Silverman OriginalPaper Pages: 1009 - 1013
N-Type Hg1−xCdxTe: Undoped x = 0.3 LPE material for sprite IR detectors A. McAllisterE. S. O’keefeD. T. Dutton OriginalPaper Pages: 1014 - 1018
Field screening in (111)B InAsP/lnP strained quantum wells H. Q. HouC. W. Tu OriginalPaper Pages: 1019 - 1022