Abstract
We have grown highly strained In0.35Ga0.65As layers on GaAs substrates by molecular beam epitaxy to improve the performance of high hole mobility transistors (HHMTs). The mobility and sheet hole concentration of double side doped pseudomorphic HHMT structures at room temperature reached 314 cm2/V-s and 1.19 × 1012 cm−2, respectively. Photoluminescence measurements at room temperature show good crystalline quality of the In0.35Ga0.65As layers. This study suggests that the performance of HHMTs can be improved by using high-quality In0.35Ga0.65As layers for the channel of double side doped heterostructures pseudomorphically grown on GaAs substrates.
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Kudo, M., Mishima, T., Matsumoto, H. et al. Highly strained ln0.35Ga0.65As/GaAs layers grown by molecular beam epitaxy for high hole mobility transistors. J. Electron. Mater. 25, 944–947 (1996). https://doi.org/10.1007/BF02666728
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DOI: https://doi.org/10.1007/BF02666728