Electrical characterization of very-low energy (0-30 eV) CI-Radical/Ion-beam-etching induced damage using two-dimensional electron gas heterostructures Yuichi IdeShigeru KohmotoKiyoshi Asakawa OriginalPaper Pages: 3 - 7
A comparative study of wet and dry selective etching processes for GaAs/AIGaAs/lnGaAs pseudomorphic MODFETs M. TongD. G. BallegeerI. Adesida OriginalPaper Pages: 9 - 15
In situ deposition of Au on plasma-prepared GaAs substrates Kent D. ChoquetteM. HongR. S. Freund OriginalPaper Pages: 17 - 21
X-Ray diffraction observation of surface damage in chemical-mechanical polished gallium arsenide V. S. WangR. J. Matyi OriginalPaper Pages: 23 - 31
Non-Equilibium Al-Ga interdiffusion in MOCVD reactor annealed AIGaAs quantum well heterostructures S. SeshadriL. J. GuidoR. N. Sacks OriginalPaper Pages: 33 - 38
The influence of plasma etching on trap levels in InP L. HeW. A. Anderson OriginalPaper Pages: 39 - 43
Thin gate and analog capacitor dielectrics for submicron device fabrication Sing-Pin TayJoseph P. Ellul OriginalPaper Pages: 45 - 55
Hydrogen fluoride vapor etching for Pre-Epi silicon surface preparation Robert McIntoshTung-Sheng KuanEdouard Defresart OriginalPaper Pages: 57 - 60
Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x M. SanganeriaD. T. GriderJ. J. Wortman OriginalPaper Pages: 61 - 64
Advances in remote plasma-enhanced chemical vapor deposition for low temperature In situ hydrogen plasma clean and Si and Si1-xGex epitaxy T. HsuB. AnthonyA. Tasch OriginalPaper Pages: 65 - 74
PMOS integrated circuit fabrication using BF3 plasma immersion ion implantation Carey A. PicoMichael A. LiebermanNathan W. Cheung OriginalPaper Pages: 75 - 79
Formation of titanium and cobalt germanides on Si (100) using rapid thermal processing S. P. AshburnM. C. ÖztürkD. M. Maher OriginalPaper Pages: 81 - 86
Modelling of growth rate uniformity of CdTe epilayer by MOCVD Yu-Hua LeeKan-Sen Chou OriginalPaper Pages: 87 - 92
Examination of barrier layers for lead zirconate titanate thin films Lynnette D. MadsenLouise Weaver OriginalPaper Pages: 93 - 97
Ultraviolet laser-assisted surface treatment of InP with phosphine gas Takashi SuginoHiroyuki ItohJunji Shirafuji OriginalPaper Pages: 99 - 104
Optimal growth interrupts for very high quality InGaAs(P)/InP superlattices grown by MOVPE G. LandgrenJ. WallinS. Pellegrino OriginalPaper Pages: 105 - 108
Electrical and structural characterization of GaAs vertical-sidewall epilayers grown by atomic layer epitaxy D. B. GladdenW. D. GoodhueG. A. Lincoln OriginalPaper Pages: 109 - 114
Photoelectric measurement and study of diamond-like carbon thin films Reza RofanRobert BowerJames Getty OriginalPaper Pages: 115 - 117
Optical properties of strained layer (111)B Al0.15Ga0.85As-In0.04Ga0.96as quantum well heterostructures T. S. MoiseL. J. GuidoR. C. Barker OriginalPaper Pages: 119 - 124
A deep level transient spectroscopy study of rapid thermal annealed arsenic implanted silicon S. E. BeckR. J. JaccodineC. Clark OriginalPaper Pages: 125 - 128
TEM study of the effect of growth interruption in MBE of InGaP/GaAs superlattices K. MahalingamY. NakamuraG. Y. Robinson OriginalPaper Pages: 129 - 133