Abstract
The influence of growth interruption during the MBE growth of (100) In0.5Ga0.5P/GaAs superlattices is investigated by cross-sectional TEM. A roughening of the growth front is observed during an interruption after the exchange of the group-V molecular beams. The roughening of growth front occurs due to a spontaneous change in the growth orientation of the superlattice from [100] to 〈311〉 directions. This change in growth orientation is characterized by an initial formation of V-shaped grooves with {311} facets on the GaAs growth front which eventually lead to the formation of regions of {311} superlattice structures. The direction of V-shaped grooves is along the [011] axis, which is parallel to the surface dangling bonds of the group V atoms in the unreconstructed (100) plane. The most critical stage for the spontaneous change of the growth orientation is the interruption after the growth of a GaAs layer with the P2 flux.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
K. Kodama, M. Hoshino, K. Kitahar, M. Takikawa and M. Ozeki, Jpn. J. Appl. Phys.25, L127 (1986).
H. Y. Lee, M. J. Hafich, G. Y. Robinson, K. Mahalingam, N. Otsuka, J. Cryst. Growth111, 525 (1991).
H. Y. Lee, M. J. Hafich, G. Y. Robinson, J. Cryst. Growth105, 244 (1990).
K. Mahalingam, Y. Nakamura, N. Otsuka, H. Y. Lee, M. J. Hafich, G. Y. Robinson, Mater. Res. Soc. Symp. Proc.202, 537 (1991).
A. Y. Cho, J. App. Phys.47, 2841 (1976).
Y. Nakamura, K. Mahalingam, N. Otsuka, H. Y. Lee, M. J. Hafich, G. Y. Robinson, J. Vac. Sci. Tech.B9, 2328 (1991).
R. C. Sangster in: Compound Semiconductors, vol. 1, eds. R. K. Williardson and H. L. Goering (Reinhold, London 1962).
G. H. Olson, T. J. Aamerowski and F. Z. Hawrylo, J. Cryst. Growth59, 654 (1982).
C. B. Duke, C. Maihiot and A. Paton, J. Vac. Sci. Technol.A4, 947 (1986).
K. Stiles and A. Kahn, J. Vac. Sci. Technol.B3, 1089 (1985).
D. J. Chadi, J. Vac. Sci. Technol.B3, 1167 (1985).
M. Tanaka and H. Sakaki, J. Cryst. Growth81, 153 (1987).
S. Koshiba, S. Nanao, O. Tsuda, Y. Watanabe, Y. Sakurai, H. Sakiki, H. Kawata and M. Ando, J. Cryst. Growth95, 51 (1989).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Mahalingam, K., Nakamura, Y., Otsuka, N. et al. TEM study of the effect of growth interruption in MBE of InGaP/GaAs superlattices. J. Electron. Mater. 21, 129–133 (1992). https://doi.org/10.1007/BF02670933
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02670933