Abstract
Electrical and structural measurements have been performed on novel test structures incorporatingp-type GaAs epilayers grown by organometallic vapor phase atomic layer epitaxy on the vertical sidewalls of semi-insulating GaAs rods formed by ion-beam-assisted etching. Preliminary results indicate that the vertical-sidewall epilayers have excellent crystal quality and sufficient electrical quality to support a sidewall-epitaxy device technology. Some examples of candidate electronic, electrooptic, and photonic devices for vertical-sidewall fabrication are FETs, resistors, waveguides, modulators, and quantum-wire and quantum-dot lasers.
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M. W. Greis, G. A. Lincoln, N. Efremow and W. J. Piacentini, J. Vac. Sci. Technol.19, 1390 (1981).
W. D. Goodhue, G. D. Johnson and T. H. Windhorn, in Gal- lium Arsenide and Related Compounds 1986, ed. W. T. Lind- ley (IOP Publishing, Bristol, England, 1987), p. 349.
Y. Ide, B. T. McDermott, M. Hashemi, S. M. Bedair and W. D. Goodhue, Appl. Phys. Lett.53, 2314 (1988).
C. A. Wang, S. Patnaik, J. W. Caunt and R. A. Brown, J. Cryst. Growth93, 228 (1988).
H. J. Gopen and A. Y. C. Yu, Solid-State Electron.18, 331 (1975).
S. W. Pang, W. D. Goodhue, T. M. Lyszczarz, D. J. Ehrlich, R. B. Goodman and G. D. Johnson, J. Vac. Sci. Technol.B6, 1916 (1988).
D. L. Miller, J. Vac. Sci. Technol.B4, 655 (1986).
K. Okamoto, M. Furuta and K. Yamaguchi, Jpn. J. Appl. Phys.27, L2121 (1988).
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Gladden, D.B., Goodhue, W.D., Wang, C.A. et al. Electrical and structural characterization of GaAs vertical-sidewall epilayers grown by atomic layer epitaxy. J. Electron. Mater. 21, 109–114 (1992). https://doi.org/10.1007/BF02670929
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DOI: https://doi.org/10.1007/BF02670929