The properties of Si/Si1-xGex films grown on Si substrates by chemical vapor deposition H. M. ManasevitI. S. GergisA. B. Jones OriginalPaper Pages: 637 - 651
Luminescence properties of MgxZn1-xSe prepared by Mg diffusion H. J. ŁożykowskiP. O. HoltzB. Monemar OriginalPaper Pages: 653 - 665
Work function measurement of tungsten polycide gate structures T. J. HwangS. H. RogersB. Z. Li OriginalPaper Pages: 667 - 679
High purity GaAs grown by the hydride vpe process J. K. AbrokwahT. N. PeckB. Skromme OriginalPaper Pages: 681 - 699
Precision lattice parameter measurements on doped indium phosphide single crystals K. SugiiH. KoizumiE. Kubota OriginalPaper Pages: 701 - 712
Liquidus temperatures of hg-rich Hg-Cd-Te alloys* F. R. SzofranS. L. Lehoczky OriginalPaper Pages: 713 - 717
Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions M. I. NathanT. N. JacksonJ. M. Woodall OriginalPaper Pages: 719 - 725
Formation and characterization of CdS/ZnSiAs2 heterojunctions H. A. NasseemL. C. BurtonJ. E. Andrews OriginalPaper Pages: 727 - 741
Lpe growth of high purity InP and N- and P-In0.53Ga0.47As E. KuphalD. Fritzsche OriginalPaper Pages: 743 - 763
The nature of prismatic dislocation loops in undoped InP G. T. BrownB. CockayneW. R. MacEwan Erratum Pages: 769 - 769