Abstract
Three MOS gate structures; polysilicon, tungsten silicide and tungsten polycide, were fabricated and their workfunctions measured with the high frequency C-V technique. The work functions were 4.14 ev and 4.82 ev for phosphorus doped polysilicon and silicon-rich tungsten silicide, respectively. The tungsten polycide structure, however, showed a variance between 4.14 ev and 4.38 ev for different experiments. The polycide MOS device threshold was about 0.15 volt higher than that of polysilicon. Phosphorus out-diffusion and tungsten diffusion along polysilicon grain boundaries were postulated to explain this phenomenon.
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Hwang, T.J., Rogers, S.H. & Li, B.Z. Work function measurement of tungsten polycide gate structures. J. Electron. Mater. 12, 667–679 (1983). https://doi.org/10.1007/BF02676795
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DOI: https://doi.org/10.1007/BF02676795