Abstract
InP and In0.53Ga0.47As layers on (100)-oriented InP substrates were grown by LPE having net 1014 cm-3 carrier concentrations in the 1014 cm-3 range and 77 K electron mobilities of 75,000 and 53,000 cm2V-1s -1, respectively. A bake scheme to purify the source materials was established which is very effective and time saving. The growth temperature TG was decreased below 600 °C without loss of layer purity. The advantages of a low TG are discussed. Mobility versus electron concentration curves are given and compared with published theoretical and experimental results. For the demands of inversion MISFET’s, p-InGaAs has been grown for the first time with hole concentrations down to 5.5 × 1015 cm-3 by-applying a novel doping technique. The distribution coefficient of Zn in InGaAs is found to be kZn = 0.65 ±0.07.
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Kuphal, E., Fritzsche, D. Lpe growth of high purity InP and N- and P-In0.53Ga0.47As. J. Electron. Mater. 12, 743–763 (1983). https://doi.org/10.1007/BF02676801
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DOI: https://doi.org/10.1007/BF02676801