Anisotropy of the thermal expansion of CuIn5Se8 single crystals in two structural modifications I. V. Bodnar Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 15 May 2016 Pages: 567 - 571
Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals V. V. SobolevD. A. Perevoshchikov Electronic Properties of Semiconductors 15 May 2016 Pages: 572 - 578
X-ray conductivity of ZnSe single crystals V. Ya. DegodaG. P. Podust Electronic Properties of Semiconductors 15 May 2016 Pages: 579 - 585
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate V. Ya. AleshkinA. A. DubinovB. N. Zvonkov Spectroscopy, Interaction with Radiation 15 May 2016 Pages: 586 - 589
Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase A. V. AlpatovS. P. VikhrovP. A. Forsh Surfaces, Interfaces, and Thin Films 15 May 2016 Pages: 590 - 595
Atomic steps on an ultraflat Si(111) surface upon sublimation S. V. SitnikovA. V. LatyshevS. S. Kosolobov Surfaces, Interfaces, and Thin Films 15 May 2016 Pages: 596 - 600
Study of the phase composition of nanostructures produced by the local anodic oxidation of titanium films V. I. AvilovO. A. AgeevO. G. Tsukanova Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 May 2016 Pages: 601 - 606
Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide A. S. Il’inN. P. FantinaP. K. Kashkarov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 May 2016 Pages: 607 - 611
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range A. Yu. EgorovL. Ya. KarachinskyV. E. Bugrov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 May 2016 Pages: 612 - 615
A new simulation model for inhomogeneous Au/n-GaN structure Nese KavasogluAbdulkadir Sertap KavasogluBengul Metin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 May 2016 Pages: 616 - 620
Piezoresistive and posistor effects in polymer-semiconductor and polymer-ferropiezoceramic composites H. A. MamedovL. ParaliI. Sabikoglu Amorphous, Vitreous, and Organic Semiconductors 15 May 2016 Pages: 621 - 626
Lifetime of excitons localized in Si nanocrystals in amorphous silicon O. B. GusevA. V. BelolipetskiyE. I. Terukov Amorphous, Vitreous, and Organic Semiconductors 15 May 2016 Pages: 627 - 631
Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer V. P. PopovM. A. IlnitskiiA. V. Glukhov Physics of Semiconductor Devices 15 May 2016 Pages: 632 - 638
Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM G. B. StefanovichA. L. PergamentT. G. Stefanovich Physics of Semiconductor Devices 15 May 2016 Pages: 639 - 645
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n +-InAs heterostructure N. D. Il’inskayaS. A. KarandashevA. A. Usikova Physics of Semiconductor Devices 15 May 2016 Pages: 646 - 651
GaAs/InGaAsN heterostructures for multi-junction solar cells E. V. NikitinaA. S. GudovskikhA. Yu. Egorov Physics of Semiconductor Devices 15 May 2016 Pages: 652 - 655
Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers M. E. LevinshteinP. A. IvanovJ. W. Palmour Physics of Semiconductor Devices 15 May 2016 Pages: 656 - 661
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range A. E. ZhukovG. E. CirlinZh. I. Alferov Physics of Semiconductor Devices 15 May 2016 Pages: 662 - 666
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers Z. N. SokolovaK. V. BakhvalovL. V. Asryan Physics of Semiconductor Devices 15 May 2016 Pages: 667 - 670
Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure M. I. VexlerI. V. Grekhov Physics of Semiconductor Devices 15 May 2016 Pages: 671 - 677
Radiation-stimulated processes in transistor temperature sensors B. V. PavlykA. S. Grypa Physics of Semiconductor Devices 15 May 2016 Pages: 678 - 681
Acanthite–argentite transformation in nanocrystalline silver sulfide and the Ag2S/Ag nanoheterostructure A. I. GusevS. I. Sadovnikov Fabrication, Treatment, and Testing of Materials and Structures 15 May 2016 Pages: 682 - 687
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates V. I. KozlovskiyV. S. KrivobokA. G. Temiryazev Fabrication, Treatment, and Testing of Materials and Structures 15 May 2016 Pages: 688 - 693
Role of the heat accumulation effect in the multipulse modes of the femtosecond laser microstructuring of silicon I. V. GukG. D. ShandybinaE. B. Yakovlev Fabrication, Treatment, and Testing of Materials and Structures 15 May 2016 Pages: 694 - 698
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n +-GaN substrates M. V. VirkoV. S. KogotkovYu. G. Shreter Fabrication, Treatment, and Testing of Materials and Structures 15 May 2016 Pages: 699 - 704