Abstract
The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO2(ZrO2)/SiO2 double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO2(ZrO2)/SiO2 than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO2, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.
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Original Russian Text © M.I. Vexler, I.V. Grekhov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 5, pp. 683–688.
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Vexler, M.I., Grekhov, I.V. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure. Semiconductors 50, 671–677 (2016). https://doi.org/10.1134/S1063782616050249
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DOI: https://doi.org/10.1134/S1063782616050249