Abstract
The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped n +-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in n +-GaN films.
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Original Russian Text © M.V. Virko, V.S. Kogotkov, A.A. Leonidov, V.V. Voronenkov, Yu.T. Rebane, A.S. Zubrilov, R.I. Gorbunov, P.E. Latyshev, N.I. Bochkareva, Yu.S. Lelikov, D.V. Tarhin, A.N. Smirnov, V.Yu. Davydov, Yu.G. Shreter, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 5, pp. 711–716.
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Virko, M.V., Kogotkov, V.S., Leonidov, A.A. et al. On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n +-GaN substrates. Semiconductors 50, 699–704 (2016). https://doi.org/10.1134/S1063782616050250
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DOI: https://doi.org/10.1134/S1063782616050250