Theory of the electronic structure of substitutional semiconductor alloys: Analytical approaches A. Yu. Zakharov Review 01 July 2015 Pages: 843 - 866
Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2) Yu. K. UndalovE. I. Terukov Review 01 July 2015 Pages: 867 - 878
Magnetic structure of TlFeS2 and TlFeSe2 chalcogenides E. B. AsgerovN. T. DangE. M. Karimova Electronic Properties of Semiconductors 01 July 2015 Pages: 879 - 882
Thermoelectric power of n-InSb in a transverse quantizing magnetic field M. M. GadzhialievR. R. BashirovK. Filar Electronic Properties of Semiconductors 01 July 2015 Pages: 883 - 884
Features of the percolation scheme of transformation of the vibrational spectrum with varying alloy composition for Cd(TeSe) and (CdZn)Te alloys with soft bonds S. P. Kozyrev Electronic Properties of Semiconductors 01 July 2015 Pages: 885 - 891
Behavior of the Fe impurity in Hg3In2Te6 crystals O. G. GrushkaA. I. SavchukS. V. Bilichuk Electronic Properties of Semiconductors 01 July 2015 Pages: 892 - 894
Effect of microwave treatment on the luminescence properties of CdS and CdTe:Cl Single Crystals R. A. Red’koS. I. BudzulyakA. G. Eremeev Spectroscopy, Interaction with Radiation 01 July 2015 Pages: 895 - 898
Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique N. Sadananda KumarKasturi V. BangeraG. K. Shivakumar Spectroscopy, Interaction with Radiation 01 July 2015 Pages: 899 - 904
Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow D. S. MilakhinT. V. MalinK. S. Zhuravlev Surfaces, Interfaces, and Thin Films 01 July 2015 Pages: 905 - 910
Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures D. V. LavrukhinA. E. YachmenevP. P. Maltsev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 01 July 2015 Pages: 911 - 914
Investigations of nanodimensional Al2O3 films deposited by ion-plasma sputtering onto porous silicon P. V. SeredinA. S. LenshinI. S. Tarasov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 01 July 2015 Pages: 915 - 920
Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In0.70Al0.30As/In0.76Ga0.24As/In0.70Al0.30As structures on GaAs substrates V. A. KulbachinskiiL. N. OveshnikovP. P. Maltsev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 01 July 2015 Pages: 921 - 929
Resistance of 4H-SiC Schottky barriers at high forward-current densities P. A. IvanovT. P. SamsonovaA. S. Potapov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 01 July 2015 Pages: 930 - 934
On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates A. E. ZhukovL. V. AsryanM. V. Maximov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 01 July 2015 Pages: 935 - 938
Optical and electrical properties of silicon nanopillars L. S. GolobokovaYu. V. NastaushevA. V. Latyshev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 01 July 2015 Pages: 939 - 943
DNA detection by THz pumping A. L. ChernevN. T. BagraevM. V. Dubina Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 01 July 2015 Pages: 944 - 948
Dispersion of the refractive index of a samarium-doped Se95Te5 chalcogenide glassy semiconductor S. U. AtayevaS. I. MekhtiyevaA. I. Isayev Amorphous, Vitreous, and Organic Semiconductors 01 July 2015 Pages: 949 - 952
Effect of the length of ligands passivating quantum dots on the electrooptical characteristics of organic light-emitting diodes N. S. KurochkinA. A. VashchenkoP. N. Tananaev Amorphous, Vitreous, and Organic Semiconductors 01 July 2015 Pages: 953 - 958
Luminescence-kinetic spectroscopy of compound complexes of polyphenylquinolines E. L. AleksandrovaV. M. SvetlichnyiA. R. Tameev Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 01 July 2015 Pages: 959 - 961
Formation of III–V ternary solid solutions on GaAs and GaSb plates via solid-phase substitution reactions V. I. Vasil’evG. S. GagisV. G. Danil’chenko Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 01 July 2015 Pages: 962 - 966
Avalanche mode of high-voltage overloaded p+–i–n+ diode switching to the conductive state by pulsed illumination A. S. Kyuregyan Physics of Semiconductor Devices 01 July 2015 Pages: 967 - 971
Calculation of the optimal architecture of a double-layer ITO film intended for use in reflective contacts in blue and near-UV LEDs A. S. PavluchenkoL. K. MarkovD. A. Zakheim Physics of Semiconductor Devices 01 July 2015 Pages: 972 - 975
Effect of impurity impact ionization on the dynamic characteristics of 4H-SiC p+–n––n+ diodes at low temperatures (77 K) P. A. IvanovA. S. PotapovT. P. Samsonova Physics of Semiconductor Devices 01 July 2015 Pages: 976 - 979
Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide T. V. BezyazychnayaM. V. BogdanovichYu. P. Yakovlev Physics of Semiconductor Devices 01 July 2015 Pages: 980 - 983