Abstract
The electrical and optical properties of silicon nanopillars (Si NPs) are studied. Electron-beam lithography and reactive ion etching are used for the formation of ordered Si-NP arrays. The Si NPs with a diameter from 60 to 340 nm and a height from 218 to 685 nm are formed. The Si NPs are coated with a TiONx layer with a thickness of 8 nm for chemical and electrical passivation of the surface. Scanning electron microscopy and atomic-force microscopy are used to characterize the obtained structures. The Si-NP arrays acquire various colors when exposed to “bright-field” illumination. The spectra of reflection from the Si-NP arrays in the wavelength range 500–1150 nm are obtained.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
K. A. Gonchar, L. A. Osminkina, R. A. Galkin, M. B. Gongalsky, V. S. Marshov, V. Y. Timoshenko, M. N. Kulmas, V. V. Solovyev, A. A. Kudryavtsev, and V. A. Sivakov, J. Nanoelectron. Optoelectron. 7, 602 (2012).
G. Jia, T. Arguirov, M. Kittler, Z. Su, D. Yang, and J. Sha, Semiconductors 41, 391 (2007).
S. M. Wells, I. A. Merkulov, I. I. Kravchenko, N. V. Lavrik, and M. J. Sepaniak, ACS Nano 6, 2948 (2012).
B. Wang and P. W. Leo, Opt. Lett. 37, 3756 (2012).
Xiaocheng Li, Junshuai Li, Ting Chen, Beng Kang Tang, Jianxiong Wang, and Hongyu Yu, Nanoscale Res. Lett. 5, 1721 (2010).
S. Dominguez, I. Cornago, O. Garcia, M. Ezquer, M. J. Rodriguez, A. R. Lagunas, J. Perez-Conde, and J. Bravo, Photon. Nanostruct.: Fundamentals Appl. 11, 29 (2013).
M. Khorasaninejad, N. Abedzadeh, J. Walia, S. Patchett, and S. S. Saini, Nano Lett. 12, 4228 (2012).
L. Cao, P. Fan, E. S. Barnard, A. M. Brown, and M. L. Brongersma, Nano Lett. 10, 2649 (2010).
Seo Kwanyong, Munib Wober, Paul Steinvurzel, Ethan Schonbrun, Yaping Dan, Tal Ellenbogen, and K. B. Crozier, Nano Lett. 11, 1851 (2011).
A. A. Zalutskaya and A. V. Prokaznikov, Nano-Mikrosist. Tekh. 9, 11 (2013).
K. T. Fountaine, W. S. Whitney, and H. A. Atwater, J. Appl. Phys. 116, 153106 (2014).
F. J. Bezares, J. P. Long, O. J. Glembocki, Junpeng Guo, R. W. Rendell, R. Kasica, L. Shirey, J. C. Owrutsky, and J. D. Caldwell, Opt. Express 21, 27588 (2013).
A. B. Evlyukhin, R. L. Eriksen, Wei Cheng,_J. Beermann, C. Reinhardt, A. Petrov, S. Prorok, M. Eich, B. N. Chichkov, and S. I. Bozhevolnyi, Sci. Rep. 4, 4126 (2014).
Y. Q. Fu, A. Colli, A. Fasoli, J. K. Luo, A. J. Flewitt, A. C. Ferrari, and W. I. Milne, J. Vac. Sci. Technol. B 27, 1520 (2009).
F. N. Dultsev, S. N. Svitasheva, Yu. V. Nastaushev, and A. L. Aseev, Thin Solid Films 519, 6344 (2011).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © L.S. Golobokova, Yu.V. Nastaushev, F.N. Dultsev, N.V. Kryzhanovskaya, E.I. Moiseev, A.S. Kozhukhov, A.V. Latyshev, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 7, pp. 961–965.
Rights and permissions
About this article
Cite this article
Golobokova, L.S., Nastaushev, Y.V., Dultsev, F.N. et al. Optical and electrical properties of silicon nanopillars. Semiconductors 49, 939–943 (2015). https://doi.org/10.1134/S1063782615070088
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782615070088