Abstract
This paper is devoted to the study of the nitridation of unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surfaces in an ammonia flow by reflection high-energy electron diffraction (RHEED). The experimental results show that sapphire nitridation occurs on the unreconstructed (1 × 1) surface, which results in AlN phase formation on the substrate surface. However, if sapphire nitridation is preceded by high-temperature annealing (1150°C) resulting in sapphire surface reconstruction with formation of the (√31 ×√31)R ± 9° surface, the crystalline AlN phase on the sapphire surface is not formed during surface exposure to an ammonia flow.
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Original Russian Text © D.S. Milakhin, T.V. Malin, V.G. Mansurov, Yu.G. Galitsin, K.S. Zhuravlev, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 7, pp. 925–931.
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Milakhin, D.S., Malin, T.V., Mansurov, V.G. et al. Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow. Semiconductors 49, 905–910 (2015). https://doi.org/10.1134/S1063782615070180
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DOI: https://doi.org/10.1134/S1063782615070180