Study of self-organization in disordered materials using information theory T. G. AvachevaN. V. BodyaginS. M. Mursalov Atomic Structure and Nonelectronic Properties of Semiconductors 09 May 2008 Pages: 499 - 504
Comparative analysis of the mechanisms of interface formation in a film structure under equilibrium and strongly nonequilibrium condition A. P. BelyaevV. P. RubetsKh. A. Toshkhodzhaev Atomic Structure and Nonelectronic Properties of Semiconductors 09 May 2008 Pages: 505 - 507
Optical and photoelectrical properties of AgCd2GaS4 single-crystal compounds L. V. BulatetskayaV. V. BozhkoO. V. Parasyuk Electronic and Optical Properties of Semiconductors 09 May 2008 Pages: 508 - 513
Extrinsic conductivity of Hg3In2Te6 single crystals L. A. KosyachenkoI. I. GermanE. S. Nikonyuk Electronic and Optical Properties of Semiconductors 09 May 2008 Pages: 514 - 517
Electroluminescence and phototrigger effect in single crystals of GaS x Se1−x alloys A. G. Kyazym-ZadeV. M. SalmanovA. A. Agaeva Electronic and Optical Properties of Semiconductors 09 May 2008 Pages: 518 - 521
Y and Z luminescence of polycrystalline cadmium telluride grown by a nonequilibrium reaction of the direct synthesis of components V. V. UshakovYu. V. Klevkov Electronic and Optical Properties of Semiconductors 09 May 2008 Pages: 522 - 527
Specific features of intrinsic photoconductivity spectra of copper-compensated indium phosphide Ph. V. MakarenkoN. N. PribylovV. A. Mel’nik Electronic and Optical Properties of Semiconductors 09 May 2008 Pages: 528 - 530
Study of the properties of the surface of gallium arsenide by scanning atomic force microscopy V. G. BozhkovN. A. TorkhovV. A. Novikov Semiconductor Structures, Interfaces, and Surfaces 09 May 2008 Pages: 531 - 539
Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures S. V. ZaitsevA. A. MaksimovA. Waag Semiconductor Structures, Interfaces, and Surfaces 09 May 2008 Pages: 540 - 544
Infrared transmittance spectra of photoluminescent oxide films with Si and Ge quantum dots formed by pulsed laser ablation I. P. LisovskyyS. A. ZlobinE. V. Begun Low-Dimensional Systems 09 May 2008 Pages: 545 - 549
Theoretical study of auger recombination processes in deep quantum wells L. V. DanilovG. G. Zegrya Low-Dimensional Systems 09 May 2008 Pages: 550 - 556
Threshold characteristics of an IR laser based on deep InAsSb/AlSb quantum well L. V. DanilovG. G. Zegrya Low-Dimensional Systems 09 May 2008 Pages: 557 - 562
Critical thickness for the Stranski-Krastanov transition treated with the effect of segregation D. V. YurasovYu. N. Drozdov Low-Dimensional Systems 09 May 2008 Pages: 563 - 570
High-frequency properties of double-well nanostructures V. F. ElesinI. Yu. Kateev Low-Dimensional Systems 09 May 2008 Pages: 571 - 575
Enhancement of photoluminescence of structures with nanocrystalline silicon stimulated by low-dose irradiation with γ-ray photons I. P. LisovskyyI. Z. IndutniĭP. E. Shepelyavyĭ Low-Dimensional Systems 09 May 2008 Pages: 576 - 579
Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures A. N. RazzhuvalovS. N. Grinyaev Low-Dimensional Systems 09 May 2008 Pages: 580 - 588
Nature of damped current oscillations in the formation of a static acoustoelectric domain in a n-InGaAs/GaAs quantum-well heterostructure P. A. BelevskiĭM. N. VinoslavskiĭI. V. Stroganova Low-Dimensional Systems 09 May 2008 Pages: 589 - 592
Electron diffraction studies of short-range order parameters in amorphous Yb1−x Sm x As2S4 films É. Sh. HajiyevA. I. Madadzade Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 09 May 2008 Pages: 593 - 595
Thermal instability of silicon fullerenes stabilized with hydrogen: Computer simulation A. E. Galashev Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 09 May 2008 Pages: 596 - 603
Intrinsic luminescence of Tb in metal-polymer complexes of polyamide acids É. A. LebedevM. Ya. GoikhmanA. V. Yakimanskiĭ Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 09 May 2008 Pages: 604 - 607
A cascade laser on shallow-donor transitions in δ-Doped GaAs/AlGaAs superlattices N. A. BekinV. N. Shastin Physics of Semiconductor Devices 09 May 2008 Pages: 608 - 615
Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy V. N. JmerikA. M. MizerovS. V. Ivanov Fabrication, Treatment, and Testing of Materials and Structures 09 May 2008 Pages: 616 - 623