Abstract
The intrinsic photoconductivity of copper-compensated indium phosphide has been studied. It is found that mechanical polishing of a sample surface gives rise to an additional photoconductivity peak in the region of the fundamental absorption edge. This peak disappears upon storage of the sample. The dependence of the shape of the photoconductivity spectrum on the storage time, electric-field strength, and position of the light spot with respect to the contacts was determined. The results are explained in terms of variation in the lifetime of nonequilibrium carriers across the sample thickness. An expression qualitatively describing the photoconductivity spectra is presented.
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Original Russian Text © Ph.V. Makarenko, N.N. Pribylov, S.I. Rembeza, V.A. Mel’nik, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 5, pp. 542–545.
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Makarenko, P.V., Pribylov, N.N., Rembeza, S.I. et al. Specific features of intrinsic photoconductivity spectra of copper-compensated indium phosphide. Semiconductors 42, 528–530 (2008). https://doi.org/10.1134/S1063782608050072
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DOI: https://doi.org/10.1134/S1063782608050072