Abstract
On the basis of analytical and numerical solutions of the Schrödinger equation, the active polarization current and emission efficiency of double-well nanostructures were calculated in a wide range of amplitudes of alternating electromagnetic field. It is shown that generation in the important terahertz region with smooth frequency tuning and the highest efficiency are possible. The behavior of the coefficient of reflection of electrons from the structure is studied; this coefficient goes to zero under the conditions of maximum efficiency.
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V. F. Elesin, Zh. Éksp. Teor. Fiz. 127, 131 (2005) [JETP 100, 116 (2005)].
V. F. Elesin, Zh. Éksp. Teor. Fiz. 128, 922 (2005) [JETP 101, 795 (2005)].
V. F. Elesin and I. Yu. Kateev, Fiz. Tekh. Poluprovodn. 39, 1106 (2005) [Semiconductors. 39, 1071 (2005)].
V. F. Elesin, Zh. Éksp. Teor. Fiz. 122, 131 (2002) [JETP 122, 114 (2002)].
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Original Russian Text © V.F. Elesin, I.Yu. Kateev, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 5, pp. 586–590.
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Elesin, V.F., Kateev, I.Y. High-frequency properties of double-well nanostructures. Semiconductors 42, 571–575 (2008). https://doi.org/10.1134/S106378260805014X
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DOI: https://doi.org/10.1134/S106378260805014X