Self-ordering of Mg and O isoelectronic impurities in ZnSe O. V. ElyukhinaG. S. SokolovskiiV. I. Kuchinskii Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 125 - 129
Mechanisms of recombination of nonequilibrium charge carriers in epitaxial CdxHg1−x Te (x = 0.20–0.23) layers D. G. IkusovF. F. SizovV. V. Teterkin Electronic and Optical Properties of Semiconductors Pages: 130 - 135
Microphotoluminescence of undoped cadmium telluride grown by nonequilibrium direct synthesis from the flow of components’ vapors V. V. UshakovYu. V. Klevkov Electronic and Optical Properties of Semiconductors Pages: 136 - 139
Superconducting states of lead nanoinclusions in the stoichiometric PbTe matrix L. A. DarchukS. D. DarchukA. G. Golenkov Electronic and Optical Properties of Semiconductors Pages: 140 - 144
Resonant gallium level in Pb1−x SnxTe alloys under pressure E. P. SkipetrovA. V. GolubevV. E. Slyn’ko Electronic and Optical Properties of Semiconductors Pages: 145 - 149
Electrical properties of isotype N +-GaSb/n0-GaInAsSb/N +-GaAlAsSb type-II heterojunctions M. A. AhmetogluI. A. AndreevYu. P. Yakovlev Semiconductor Structures, Interfaces, and Surfaces Pages: 150 - 154
Fabrication and photoelectric properties of oxide/CuIn5Se8 heterojunctions I. V. Bodnar’A. A. VaĭpolinE. I. Terukov Semiconductor Structures, Interfaces, and Surfaces Pages: 155 - 158
The effect of surface passivation on the intrinsic photoconductivity of gallium phosphide compensated with copper A. A. KozhevnikovN. N. Pribylov Semiconductor Structures, Interfaces, and Surfaces Pages: 159 - 160
Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system M. P. MikhailovaK. D. MoiseevYu. P. Yakovlev Semiconductor Structures, Interfaces, and Surfaces Pages: 161 - 166
Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers M. V. ShaleevA. V. NovikovZ. F. Krasil’nik Low-Dimensional Systems Pages: 167 - 171
Photoluminescence of germanium quantum dots formed by pulsed laser ablation É. B. KaganovichÉ. G. ManoilovE. V. Begun Low-Dimensional Systems Pages: 172 - 175
Luminescence of zinc oxide nanorods G. A. Emel’chenkoA. N. GruzintsevC. Barthou Low-Dimensional Systems Pages: 176 - 179
Properties of 2D electron gas in AlGaAs/GaAs heterojunctions with thin AlGaAs layers D. A. KozlovZ. D. KvonA. I. Toropov Low-Dimensional Systems Pages: 180 - 183
Dielectric function of quasi-2D semiconductor nanostructures N. L. BazhenovK. D. MynbaevG. G. Zegrya Low-Dimensional Systems Pages: 184 - 189
Computer study of physical properties of silicon nanostructures A. E. GalashevI. A. IzmodenovO. A. Novruzova Low-Dimensional Systems Pages: 190 - 196
Resonances related to an array of InAs quantum dots and controlled by an external electric field V. G. TalalaevB. V. NovikovA. A. Tonkikh Low-Dimensional Systems Pages: 197 - 204
Mechanism of the effect of the electric field of a surface acoustic wave on the low-temperature photoluminescence kinetics in type-II GaAs/AlAs superlattices D. V. GulyaevK. S. Zhuravlev Low-Dimensional Systems Pages: 205 - 210
Control over carrier lifetime in high-voltage p-i-n diodes based on InxGa1-x As/GaAs heterostructures F. Yu. SoldatenkovV. G. Danil’chenkoV. I. Korol’kov Physics of Semiconductor Devices Pages: 211 - 214
Superconducting tunneling-junction detectors of X-ray radiation. Issues concerning the energy resolution V. A. AndrianovV. P. Gor’kovL. V. Filippenko Physics of Semiconductor Devices Pages: 215 - 222
Silicon photodiode with a grid p-n junction V. I. BlynskiiYu. G. VasileuskiiA. L. Chizh Physics of Semiconductor Devices Pages: 223 - 226
Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers N. V. AlkeevS. V. AverinF. J. Tegude Physics of Semiconductor Devices Pages: 227 - 231
Electron transport and detection of terahertz radiation in a GaN/AlGaN submicrometer field-effect transistor V. I. GavrilenkoE. V. DemidovJ. Lusakowski Physics of Semiconductor Devices Pages: 232 - 234
EBIC study of resistive photosensitive elements based on HgCdTe P. S. VergelesV. V. KrapukhinE. B. Yakimov Physics of Semiconductor Devices Pages: 235 - 239
Anatoliĭ Grigor’evich Samoĭlovich (1906–2006) (On the centenary of his birth) L. P. BulatG. N. LogvinovStudents and followers Personalia Pages: 240 - 241