Abstract
The possibility of controlling the effective lifetime of nonequilibrium carriers by varying the lattice mismatch between the interfaced materials of a heterostructure has been studied on the example of InGaAs/GaAs heterostructures. It was found that, at a given composition (thickness) of a lightly doped layer of the InGaAs alloy, the nonequilibrium carrier lifetime depends on its thickness (composition), which enables variation of the nonequilibrium carrier lifetime from several nanoseconds to a microsecond without any significant change in the concentration of mobile carriers. The results obtained were used to fabricate pulse p +-p 0-π-n 0-n + diodes with blocking voltages of up to 500 V, which can switch currents of ≥10 A and have recovery times no longer than 10 ns.
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Original Russian Text © F.Yu. Soldatenkov, V.G. Danil’chenko, V.I. Korol’kov, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 2, pp. 217–220.
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Soldatenkov, F.Y., Danil’chenko, V.G. & Korol’kov, V.I. Control over carrier lifetime in high-voltage p-i-n diodes based on InxGa1-x As/GaAs heterostructures. Semiconductors 41, 211–214 (2007). https://doi.org/10.1134/S1063782607020182
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DOI: https://doi.org/10.1134/S1063782607020182