Abstract
The experimental temperature dependences of the photosensitivity and the data on the lifetime of nonequilibrium charge carriers in epitaxial CdxHg1−x Te layers with x = 0.20–0.23 were used to show that, in the region of intrinsic and extrinsic conductivity in n-type films grown by molecular beam epitaxy, CHCC Auger recombination is the prevailing recombination mechanism. At the same time, in p-type films grown by liquid-or vapor-phase epitaxy, it is observed that, in the region of extrinsic conductivity, CHLH Auger recombination competes with Shockley-Read recombination. The n-type films grown by molecular beam epitaxy contain a much lower concentration of recombination centers than the p-type films grown by liquid-or gasphase epitaxy.
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References
Optical and Infrared Detectors, Ed. by R. J. Keyes (Springer, New York, 1977; Radio i Svyaz’, Moscow, 1985), p. 104.
A. Rogalski, Infrared Photon Detectors (SPIE Optical Engineering Press, Bellingham, WA, 1995), p. 145.
S. M. Ryvkin, Photoelectric Effects in Semiconductors (Fizmatgiz, Moscow, 1963; Consultants Bureau, New York, 1964), p. 39.
A. V. Voĭtsekhovskiĭ, Yu. A. Denisov, A. P. Kokhanenko, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 774 (1997) [Semiconductors 31, 655 (1997)].
G. Busch and U. Winkler, Bestimmung der Characteristischen Groben eines Halbleiters aus Elektrischen, Optischen und Magnetischen Messungen (Zürich, 1956; Inostrannaya Literatura, Moscow, 1959).
N. S. Baryshev, B. L. Gel’mont, and M. I. Ibragimova, Fiz. Tekh. Poluprovodn. (Leningrad) 24, 209 (1990) [Sov. Phys. Semicond. 24, 127 (1990)].
A. R. Beattie, J. Phys. Chem. Solids 23, 1049 (1062).
T. N. Casselman, J. Appl. Phys. 52, 848 (1981).
W. van Roosbroeck and W. Shockley, Phys. Rev. 94, 1558 (1954).
M. Y. Pines and O. M. Stafsudd, Infrared Phys. 20, 73 (1980).
V. C. Lopes, W. H. Wright, and A. J. Syllaios, J. Vac. Sci. Technol. A 8, 1167 (1990).
C. E. Jones, V. Nair, and D. L. Polla, Appl. Phys. Lett. 39, 248 (1981).
D. Rosenfeld and G. Bahir, IEEE Trans. Electron Devices 39, 1638 (1992).
V. L. Bonch-Bruevich and S. G. Kalashnikov, Physics of Semiconductors (Nauka, Moscow, 1977), p. 342 [in Russian].
D. E. Lacklison and P. Capper, Semicond. Sci. Technol. 2, 33 (1987).
O. L. Doyle, J. A. Mroczkowski, and J. F. Shanley, J. Vac. Sci. Technol. A 3, 259 (1985).
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Original Russian Text © D.G. Ikusov, F.F. Sizov, S.V. Staryĭ, V.V. Teterkin, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 2, pp. 134–139.
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Ikusov, D.G., Sizov, F.F., Staryi, S.V. et al. Mechanisms of recombination of nonequilibrium charge carriers in epitaxial CdxHg1−x Te (x = 0.20–0.23) layers. Semiconductors 41, 130–135 (2007). https://doi.org/10.1134/S1063782607020029
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DOI: https://doi.org/10.1134/S1063782607020029