Abstract
When an indium antimonide (InSb) infrared focal plane array (IRFPA) is subjected to a thermal shock test, most of the cracks originate from the region over the negative electrode, which restricts its final yield. In light of the proposed equivalent modeling, three negative electrode structures are assessed to eliminate the accumulated deformation around the negative electrode. Simulation results show that when a thicker indium bump array is connected directly with negative InSb material, the accumulated thermal deformation is the minimum, the top surface of InSb chip is the smoothest, and the square checkerboard buckling pattern, present clearly in both gold buffer layer and sparse thicker indium bump array structure, seems to be unclear. All these mean that a thicker indium bump array structure is a good choice, which will benefit to reduce fracture probability of InSb IRFPAs under thermal shock.
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Recommended by Associate Editor Moon Ki Kim
XiaoLing Zhang received the B.S. degree in computer software from Zhengzhou University in 2000 and the M.S. degree in applied computer technology from Henan University of Science and Technology in 2008. Her research interests include pattern recognition, tunable devices simulation and IR detectors structural optimization.
QingDuan Meng received the B.S. degree in applied physics in 2000 and the M.S. degree in microelectronics and solid-state electronics in 2003 from Dalian University of Science and Technology, and the Ph.D. degree in condensed matter physics from Institute of Physics, Chinese Academy of Sciences (CAS), in 2006. His research interests are the design and fabrication of high temperature superconductor (HTS) filters, tunable ferroelectric devices, infrared (IR) detectors.
Liwen Zhang obtained her B.E. and M.S. degree in Physics from Zhengzhou University, Zhengzhou, from 1997 to 2004; then received her Ph.D. degree in Atomic and Molecular Physics at Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan, in 2008. Her major field of study is optoelectronics and structural stress analysis in IRFPA.
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Zhang, X., Meng, Q., Zhang, L. et al. Negative electrode structure design in InSb focal plane array detector for deformation reduction. J Mech Sci Technol 28, 2281–2285 (2014). https://doi.org/10.1007/s12206-014-0517-4
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DOI: https://doi.org/10.1007/s12206-014-0517-4