Abstract
In the present study, cadmium sulphide (CdS) nanopowders were prepared by using a simple physical ball milling technique, and their x-ray diffraction (XRD) analysis confirmed the formation of hexagonal wurtzite structure of CdS. The morphology of CdS nanopowders was characterized by scanning electron microscope (SEM). Dielectric and electrical properties of the manufactured Al/(CdS-PVA)/p-Si (MPS) type structures were investigated by capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements as functions of temperature and applied bias voltage at 500 kHz. Some main parameters of the structure such as real and imaginary parts of complex dielectric constants, ε′(= ε′–jε″), loss tangent (tan δ), a.c. electrical conductivity (σac), and real and imaginary parts of complex electric modulus, M*(= M′ + jM″) of the structure were investigated in the temperature range between 230 K and 340 K. Ln(σac)–q/kT curve showed a linear behavior. The value of activation energy (Ea) was obtained as 0.0601 eV at 5.0 V from the slope of this curve. Moreover, argand diagrams of complex modulus were studied to determine relaxation process of these structures.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
P.K. Khanna and N. Singh, J. Lumin. 127, 474 (2007).
A. Dey, S. De, A. De, and S.K. De, Nanotechnology 15, 1277 (2004).
W. Cai, X. Gong, and Y. Cao, Sol. Energy Mater. Sol. C 94, 114 (2010).
A. Demir, S. Bağcı, S.E. San, and Z. Doğruyol, Surf. Rev. Lett. 22, 1550038 (2015).
A. Demir, A. Atahan, S. Bağcı, M. Aslan, and M.S. Islam, Philos. Mag. 96, 274 (2016).
S.K. Mishra, R.K. Srivastava, S.G. Prakash, R.S. Yadav, and A.C. Panday, J. Alloys Compd. 513, 118 (2012).
R.R. Navan, B. Panigrahy, M.S. Baghini, D. Bahadur, and V.R. Rao, Compos. Part B Eng. 43, 1645 (2012).
S.L. Hake, P.A. Chate, D.J. Sathe, P.P. Hankare, and V.M. Bhuse, J. Mater. Sci. Mater. Electron. 25, 811 (2014).
E. Maier, A. Fischereder, W. Haas, G. Mauthner, J. Albering, T. Rath, F. Hofer, E.J.W. List, and G. Trimmel, Thin Solid Films 519, 4201 (2011).
T.P. Nguyen, Surf. Coat. Technol. 206, 742 (2011).
Z. Han, J. Zhang, X. Yang, and W. Cao, Sol. Energy Mater. Sol. C 95, 483 (2011).
Y. Azizian-Kalandaragh, F. Sedaghatdoust-Bodagh, E. Alizadeh-Gheshlaghi, and A. Khodayari, J. Nanoelectron. Optoelectron. 12, 231 (2017).
P. Eskandari, F. Kazemi, and Y. Azizian-Kalandaragh, Sep. Purif. Technol. 120, 180 (2013).
Y. Azizian-Kalandaragh, U. Aydemir, and S. Altindal, J. Electron. Mater. 43, 4 (2014).
Y. Azizian-Kalandaragh, Optoelectron. Adv. Mater. Rapid Commun. 4, 1655 (2010).
D. Rezaei-Ochbelagh, Y. Azizian-Kalandaragh, and A. Khodayari, Optoelectron. Adv. Mater. Rapid Commun. 4, 881 (2010).
Y. Azizian Kalandaragh, M.B. Muradov, R.K. Mamedov, and A. Khodayari, J. Cryst. Growth 305, 175 (2007).
Y.A. Kalandaragh, M.B. Muradov, R.K. Mamedov, M. Behboudnia, and A. Khodayari, Adv. Mater. Rapid Commun. 2, 42 (2008).
V. Singh, P.K. Sharma, and P. Chauhan, Mater. Charact. 62, 43 (2011).
K. Susa, T. Kobayashi, and S. Taniguchi, J. Solid State Chem. 33, 197 (1980).
A. Kaya, İ. Yücedağ, H. Tecimer, and Ş. Altındal, Mater. Sci. Semicond. Proc. 28, 26 (2014).
H. Wang, P. Fang, Z. Chen, and S. Wang, Appl. Surf. Sci. 253, 8495 (2007).
S.R. Forrest, Org. Electron. 4, 45 (2003).
P.L. Burn, S.C. Lo, and I.D.W. Samuel, Adv. Mater. 19, 1675 (2007).
İ. Yücedağ, A. Kaya, and Ş. Altındal, Int. J. Mod. Phys. B 28, 1450153 (2014).
H. Tecimer, H. Uslu, Z.A. Alahmed, F. Yakuphanoğlu, and Ş. Altındal, Compos. Part B Eng. 57, 25 (2014).
İ. Yücedağ, G. Ersöz, A. Gümüş, and ş. Altındal, Int. J. Mod. Phys. B 29, 1550075 (2015).
T. Tunç, Ş. Altındal, İ. Dökme, and H. Uslu, J. Electron. Mater. 40, 157 (2011).
V.R. Reddy, Thin Solid Films 556, 300 (2014).
S.M. Sze, Physics of Semiconductor Devices (New York: Wiley, 1981).
E.H. Rhoderick and R.H. Williams, Metal–Semiconductor Contacts (Oxford: Clarendon Press, 1988).
J.H. Werner and H.H. Güttler, J. Appl. Phys. 69, 1522 (1991).
A. Gümüş, G. Ersöz, İ. Yücedağ, S. Bayrakdar, and ş. Altındal, J. Korean Phys. Soc. 67, 889 (2015).
Ç. Bilkan, S. Zeyrek, S.E. San, and Ş. Altındal, Mater. Sci. Semicond. Proc. 32, 137 (2015).
G. Ersöz, İ. Yücedağ, Y. Azizian-Kalandaragh, İ. Orak, and Ş. Altındal, IEEE Trans. Electron. Dev. 63, 2948 (2016).
İ. Dökme and Ş. Altındal, IEEE Trans. Electron. Dev. 58, 4042 (2011).
Ş. Altındal, İ. Yücedağ, and A. Tataroğlu, Vacuum 84, 363 (2009).
N. Baraz, İ. Yücedağ, Y. Azizian-Kalandaragh, and Ş. Altındal, J. Mater. Sci. Mater. Electron. 28, 1315 (2017).
İ. Yücedağ, Optoelectron. Adv. Mater. Rapid Commun. 3, 612 (2009).
B. Kınacı and S. Özçelik, J. Electron. Mater. 42, 1108 (2013).
D. Maurya, J. Kumar, and Shripal, J. Phys. Chem. Solids 66, 1614 (2005).
İ. Yücedağ, A. Kaya, H. Tecimer, and Ş. Altındal, Mater. Sci. Semicond. Proc. 28, 37 (2014).
M.R.R. Raju, R.N.P. Choudhary, and S. Ram, Phys. Status Solidi B 239, 480 (2003).
S.A. Awan and R.D. Gould, Thin Solid Films 423, 267 (2003).
C.V. Kannan, S. Ganesamoorthy, C. Subramanian, and P. Ramasamy, Phys. Status Solidi A 196, 465 (2003).
K.S. Moon, H.D. Choi, A.K. Lee, K.Y. Cho, H.G. Yoon, and K.S. Suh, J. Appl. Polym. Sci. 77, 1294 (2000).
A. Tataroğlu, Ş. Altındal, and M.M. Bülbül, Microelectron. Eng. 81, 140 (2005).
S. Maity, D. Bhattacharya, and S.K. Ray, J. Phys. D Appl. Phys. 44, 095403 (2011).
A. Tataroğlu, Microelectron. Eng. 83, 2551 (2006).
M.O. Aboelfotoh, A. Cros, B.G. Svensson, and K.N. Tu, Phys. Rev. B 41, 9819 (1990).
P. Pissis and A. Kyritsis, Solid State Ionics 97, 105 (1997).
K. Prabakar, S.K. Narayandass, and D. Mangalaraj, Phys. Status Solidi A 199, 507 (2003).
E. Barsoukov and J.R. Macdonald, Impedance Spectroscopy (Hoboken: Wiley, 2005).
Y.Ş. Asar, T. Asar, Ş. Altındal, and S. Özçelik, Philos. Mag. 95, 2885 (2015).
I.M. Hodge, K.L. Ngai, and C.T. Moynihan, J. Non-Cryst. Solids 351, 104 (2005).
K.S. Cole and R.H. Cole, J. Chem. Phys. 9, 3411 (1941).
A. Kaya, S. Alialy, S. Demirezen, M. Balbaşı, S.A. Yerişkin, and A. Aytimur, Ceram. Int. 42, 3322 (2016).
S.A. Yerişkin, M. Balbaşı, and A. Tataroğlu, J. Appl. Polym. Sci. 133, 43827 (2016).
Acknowledgments
This study was financially supported by Düzce University Scientific Research Project (Project Number: 2017.07.02.567) and Gazi University Scientific Research Project (Project Number: GUBAP.05/2018-10).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Ersöz Demir, G., Yücedağ, İ., Azizian-Kalandaragh, Y. et al. Temperature and Interfacial Layer Effects on the Electrical and Dielectric Properties of Al/(CdS-PVA)/p-Si (MPS) Structures. J. Electron. Mater. 47, 6600–6606 (2018). https://doi.org/10.1007/s11664-018-6578-x
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-018-6578-x