Abstract
The interface of ZnTe/Si(211) grown by molecular beam epitaxy was investigated by high-resolution transmission electron microscopy. Several types of defects such as misfit dislocations, stacking faults, agglomerations of vacancies, and precipitates were observed and studied by electron microscopy at the ZnTe/Si interface. The distribution of misfit dislocations at the interface was revealed with the assistance of the fast Fourier transformation filtering technique. A stick-and-ball interface model including misfit dislocation geometry is proposed. The possible origins of the stacking faults, vacancies, and precipitates are discussed.
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Wang, X.J., Chang, Y., Becker, C.R. et al. Microstructure of Heteroepitaxial ZnTe Grown by Molecular Beam Epitaxy on Si(211) Substrates. J. Electron. Mater. 40, 1860–1866 (2011). https://doi.org/10.1007/s11664-011-1648-3
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DOI: https://doi.org/10.1007/s11664-011-1648-3