Abstract
A detailed analysis of the As-exposed Si (112) and subsequent Te exposure was performed. X-ray photoelectron spectroscopy shows that the Te- and As-exposed Si (112) surface had 70% As and 27% Te coverage, respectively. Direct surface coverage measurement with ion scattering spectroscopy (ISS) shows that the Si (111) surface is completely covered by As, and that of the Si (112) had about 78% and 20% coverage of As and Te, respectively. Finally, using ISS shadowing effects, it was found that the Te atoms were positioned mainly on the step edges.
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Jaime-Vasquez, M., Martinka, M., Jacobs, R.N. et al. In-situ spectroscopic study of the As and Te on the Si (112) surface for high-quality epitaxial layers. J. Electron. Mater. 35, 1455–1460 (2006). https://doi.org/10.1007/s11664-006-0283-x
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DOI: https://doi.org/10.1007/s11664-006-0283-x