Abstract
Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO2/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO2/SiO2/SiC could be observed by Raman, XRD and HRTEM.
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Banu, N.D., Banu, I.B., Katsiotis, M.S. et al. Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy. Chem. Pap. 70, 1503–1511 (2016). https://doi.org/10.1515/chempap-2016-0084
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DOI: https://doi.org/10.1515/chempap-2016-0084