Abstract
In this work, silicon wafers were thermal treated in air at temperatures varied in the range 800—1200 °C. The annealed samples were investigated using FTIR, X-ray diffraction, FTIR and optical reflection spectroscopy. The effect of annealing temperature on the (1000–1300) cm−1 band in FT-IR spectra of the prepared samples was investigated. The results showed that thermal oxidation at temperatures less than 1200 °C leads to enhance the phenomenon of the splitting of longitudinal optical and transverse optical stretching motions. This phenomenon was verified by observing the appearance of two overlapping peaks in the region (1000–1300) cm−1 in FT-IR spectra. The results also showed that the splitting process leads to the formation of defects in the crystal structure of silicon, which in turn leads to the formation of silicon nanoparticles.
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The authors would like to thank the University of Damascus and the Higher Institute for Applied Sciences and Technology for providing the facility to carry out this research.
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Dr. Kamal characterized the samples and analyzed the results of the research, and was a major contributor in writing the manuscript. Miss Dalal performed the annealing procedures and contributed to the analysis of the results and the writing of the manuscript.
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Kayed, K., Kurd, D.B. The Effect of Oxidation Temperature on the (1000–1300) cm−1 Band in FT-IR Spectra of Silicon Oxide Synthesized by Thermal Oxidation of Silicon Wafers. Silicon 14, 10081–10086 (2022). https://doi.org/10.1007/s12633-022-01732-5
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DOI: https://doi.org/10.1007/s12633-022-01732-5