Abstract
In this article, silicon wafers were thermal treated in air at temperatures from 800 to 1200 °C. The annealed samples were investigated using X-ray diffraction, FTIR and optical reflection spectroscopy. Unique result obtained includes that possibility of employing the thermal oxidation of silicon to obtain Si/SiOx composites with various energy gaps suitable for the manufacture of semiconductor devices. In addition, we found that the splitting of longitudinal optical and transverse optical stretching motions effect on the relative absorption coefficient. On the other hand, it has been found that, the intensity of the silicon peak in XRD spectra is proportional to the relative absorption coefficient of amorphous silicon oxide.
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The authors would like to thank the University of Damascus and the Higher Institute for Applied Sciences and Technology for providing the facility to carry out this research.
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Dr. Kamal characterized the samples and analyzed the results of the research, and was a major contributor in writing the manuscript. Miss Dalal performed the annealing procedures and contributed to the analysis of the results and the writing of the manuscript.
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Kayed, K., Kurd, D.B. The Effect of Annealing Temperature on the Structural and Optical Properties of Si/SiO2 Composites Synthesized by Thermal Oxidation of Silicon Wafers. Silicon 14, 5157–5163 (2022). https://doi.org/10.1007/s12633-021-01307-w
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DOI: https://doi.org/10.1007/s12633-021-01307-w