Abstract
In this paper, a novel n + SiGe pocket layer gate stacked VTFET doping less charge plasma is proposed and analyzed using Silvaco TCAD simulation software. The proposed device will be worked as a transducer sensor which is based upon the principle of the electrostatic charge plasma. The inclusion of doping less charge plasma will ease the device in terms of cost production and form random dopant fluctuation (RDF). The inclusion of charge plasma with gate stacking will enhance the electrostatics control over the gate in order to gain the variation of drain current to boost the current sensitivity. The selection width of the High-K dielectric constant material with SiO2 will filter out using equivalent gate oxide thickness. The physics behind the change is work function of the gate material in the presence of the gas material is the dissociation and absorption of gas molecule via diffusion process to the catalytic gate metal of the device. In addition, n + SiGe pocket layer is introducing to suppress the tunneling barrier at source channel interface due to reduction in the band gap energy material from 1.1 to 0.7 eV. This paper analysis with oxygen and ammonia gases forms different introduced gate metal electrode such as Silver (m1 = 4.26–4.46 eV), Molybdenum (m2 = 4.40–4.60 eV), Ruthenium (m3 = 4.71–4.91 eV), and Cobalt (m4 = 5.0–5.20 eV). In this regard, the current sensitivity, electric filed, surface potential, energy band gap and other electrical characteristics with different drain and gate bias with suitable range is operated. The vertical distribution of the channel concentration will improve the device scalability. To test changes in device sensitivity of the catalytic material of the gate electrode will increases as a work function with the range of 50, 100, 150, 200, and 250 meV. The reported sensitivity (Idon/Idoff) is higher for lower work function i.e. for Silver, Cobalt, Molybdenum and Ruthenium the sensitivity is 4.18 × 102, 3.49 × 102, 1.02 × 103 and 2.79 × 101 respectively.
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Singh, S., Verma, A., Singh, J. et al. Investigation of N + SiGe Gate Stacked V-TFET Based on Dopingless Charge Plasma for Gas Sensing Application. Silicon 14, 6205–6218 (2022). https://doi.org/10.1007/s12633-021-01416-6
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DOI: https://doi.org/10.1007/s12633-021-01416-6