Abstract
In this paper, the most recent achievements in the field of device fabrication, based on nanostructured silicon, will be reviewed. Top-down techniques for silicon nanowire production based on lithography, oxidation and highly anisotropic etching (wet, plasma and metal assisted) will be discussed, illustrating both advantages and drawbacks. In particular, fabrication processes for a massive production of silicon nanowires, organized and interconnected in devices with macroscopic dimensions, will be shown and discussed. These macroscopic devices offer the possibility of exploiting the nanoscale thermoelectric properties of silicon in practical applications. In particular, the reduced thermal conductivity of silicon nanowires, with respect to bulk silicon, makes possible to obtain high efficiencies in the direct conversion of heat into electrical power, with intriguing applications in the field of green energy harvesting. The main experiments elucidating the electrical and thermal properties of silicon nanowire devices will be shown and discussed, and compared with the recent theoretical works developed on the subject.
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References
H. Goldsmid, R. Douglass, Br. J. Appl. Phys. 5, 386 (1954)
Z. Dughaish, Physica B 322, 205 (2002)
Y. Gelbstein, Z. Dashevsky, M. Dariel, Physica B 363, 196 (2005)
B. Lorenzi, D. Narducci, R. Tonini, S. Frabboni, G. Gazzadi, G. Ottaviani, N. Neophytou, X. Zianni, J. Electron. Mater. 16, 79 (2012)
B. Lorenzi, S. Frabboni, G.C. Gazzadi, R. Tonini, G. Ottaviani, D. Narducci, J. Electron. Mater. 16, 79 (2012)
N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci, Nanotechnology 24, 205402 (2013)
D. Li, Y. Wu, P. Kim, L. Shi, P. Yang, A. Majumdar, Appl. Phys. Lett. 83, 2934 (2003)
A. Boukay, Y. Bunimovich, J. Tahir-Kheli, J.K. Yu, W.A. Goddard III, J.R. Heat, Nat. Lett. 451, 168 (2008)
A.I. Hochbaum, R. Chen, R.D. Delgrado, W. Liang, C.E. Garnett, M. Najarian, A. Majumdar, P. Yang, Nat. Lett. 451, 163 (2008)
G. Pennelli, M. Macucci, J. Appl. Phys. 114, 214507 (2013)
L. Hics, M. Dresselhaus, Phys. Rev. B 47, 12727 (1993)
L. Hics, M. Dresselhaus, Phys. Rev. B 47, 16631 (1993)
G. Liang, W. Huang, S. Koong, J.S. Wang, J. Lan, J. Appl. Phys. 107, 014317 (2010)
G. Masetti, M. Severi, S. Solmi, IEEE Trans. Electron Devices 30, 764 (1983)
S. Reggiani, M. Valdinoci, L. Colalongo, M. Rudan, G. Baccarani, D. Stricker, A.F. Illien, N. Felber, W. Fichtner, L. Zullino, IEEE Trans. Electron Devices 49, 490 (2002)
A. Balandin, K.L. Wang, Phys. Rev. B 58, 1544 (1998)
J. Zou, A. Balandin, J. Appl. Phys. 89, 2932 (2001)
J. Callaway, Phys. Rev. 113, 1046 (1958)
N. Mingo, Phys. Rev. B 68, 1113308 (2003)
N. Melosh, A. Boukay, F. Diana, B. Gerardot, A. Badolato, P. Petroff, J. Heath, Science 300, 112 (2003)
R. Chen, A. Hochbaum, P. Murphy, J. Moore, P. Yang, A. Majumdar, Phys. Rev. Lett. 101, 105501 (2008)
K. Hippalgaonkar, B. Huang, R. Chen, K. Sawyer, P. Ercius, A. Majumdar, Nano Lett. 10, 4341 (2010)
Y.H. Park, J. Kim, H. Kim, I. Kim, K.Y. Lee, D. Seo, H.J. Choi, W. Kim, Appl. Phys. A 104, 7 (2011)
J. Feser et al., J. Appl. Phys. 112, 114306 (2012)
J. Lim, K. Hippalgaonkar, S. Andrews, C.A. Majumdar, P. Yang, Nano Lett. 12, 2475 (2012)
G. Pennelli, A. Nannini, M. Macucci, J. Appl. Phys. 115, 084507 (2014)
J.M. Ziman, Electrons and Phonons (New York University Press, New York, 1967)
H. Casimir, Physica 5, 495 (1938)
H.L. Wang, P. Sharma, Appl. Phys. Espress 4, 025001 (2011)
D. Morelli, J. Heremans, G. Slack, Phys. Rev. B 66, 195304 (2002)
M. Asen-Palmer, K. Bartkowski, E. Gmelin, M. Cardona, A. Zhernov, A. Inyushkin, A. Taldenkov, V. Ozhogin, E. Itoh, K.M. Haller, Phys. Rev. B 56, 9431 (1997)
X. Yan, B. Poudel, Y. Ma, W. Liu, G. Joshi, H. Wang, Y. Lan, D. Wang, G. Chen, Z. Ren, Nano Lett. 10, 3373 (2010)
A. Moore, S. Saha, R. Prasher, S. Li, Appl. Phys. Lett. 93, 083112 (2008)
P. Martin, Z. Aksamija, E. Pop, U. Ravaioli, Phys. Rev. Lett. 102, 125503 (2009)
L. Liu, X. Chen, J. Appl. Phys. 107, 033501 (2010)
J. Carrete, L. Gallego, L. Varela, Phys. Rev. B 84, 075403 (2011)
J. Sadhu, S. Sinha, Phys. Rev. B 84, 115450 (2011)
M. Seong, J. Sadhu, M. Ghossoub, S. Sihna, J. Appl. Phys. 111, 124319 (2012)
R. Wagner, W. Ellis, Appl. Phys. Lett. 4, 89 (1964)
J. Westwater, D. Gosain, S. Tomiya, S. Usui, H. Ruda, J. Vac. Sci. Technol. B 15, 554 (1997)
A. Morales, C. Lieber, Science 279, 208 (1998)
J. Hu, M. Ouyang, P. Yang, C. Lieber, Nature 399, 48 (1999)
Y. Cui, X. Duan, J. Hu, C. Lieber, J. Phys. Chem. B 104, 5214
Y. Cui, L. Lauhon, M. Gudiksen, J. Wang, C. Lieber, Appl. Phys. Lett. 78, 2214 (2001)
Y. Cui, C. Lieber, Science 291, 851 (2001)
D. Davila, A. Tarancon, C. Calaza, M. Salleras, M. Fernandez-Regulez, A. San Paulo, L. Fonseca, Nano Energy 1, 812 (2012)
A. Perez-Marin, A. Lopeandia, L. Abad, P. Ferrando-Villaba, G. Garcia, A. Lopez, F. Munoz-Pascual, J. Viejo-Rodriguez, Nano Energy 4, 73 (2014)
G. Pennelli, M. Piotto, G. Barillaro, Microelectron. Eng. 83, 1710 (2006)
G. Pennelli, M. Piotto, Microelectron. Eng. 83, 1559 (2006)
S. Ciucci, F. D’Angelo, A. Diligenti, B. Pellegrini, G. Pennelli, M. Piotto, Microelectron. Eng. 78-79, 338 (2005)
G. Pennelli, M. Piotto, J. Appl. Phys. 100, 054507 (2006)
G. Pennelli, B. Pellegrini, J. Appl. Phys. 101, 104502 (2007)
G. Pennelli, Microelectron. Eng. 86, 2139 (2009)
F.S. Chien, W.F. Hsieh, S. Gwo, A. Vladar, J. Dagata, J. Appl. Phys. 91, 10044 (2002)
B. Legrand, D. Dresmes, D. Stievenard, J. Vac. Sci. Technol. B 20, 862 (2002)
K. Moselund, D. Bouvet, M. Jamaa, D. Atienza, G. Leblebici, G. DeMicheli, A. Ionescu, Microelectron. Eng. 85, 1406 (2008)
M. Ferri, F. Suriano, A. Roncaglia, S. Solmi, G. Cerofolini, E. Romano, D. Narducci, Microelectron. Eng. 88, 877 (2011)
R. Wang, H. Liu, R. Huang, J. Zhuge, L. Zhang, Z.X. Kim, D-.W., D. Park, Y. Wang, IEEE Trans. Electron Devices 55, 2960 (2008)
K. Nishiguchi, N. Clement, T. Yamaguhi, A. Fujiwara, Appl. Phys. Lett. 94, 163106 (2009)
J. Fu et al., IEEE Electron. Dev. Lett. 29, 518 (2008)
J. Martinez, R. Martinez, R. Garcia, Nano Lett. 8, 3636 (2008)
G. Pennelli, F. D’Angelo, M. Piotto, G. Barillaro, B. Pellegrini, Rev. Sci. Instrum. 74, 3579 (2003)
G. Pennelli, Rev. Sci. Instrum. 79, 033902 (2008)
J. Plummer, M. Deal, P. Griffin, Silicon VLSI technology (Prentice Hall, Upper Saddle River, 2000)
M.J. Madou, Fundamentals of microfabrication (CRC Press, London, 2002)
H. Seidel, L. Csepregi, A. Heuberger, H. Baumgartel, J. Electrochem. Soc. 137, 3612 (1990)
M. Totaro, P. Bruschi, G. Pennelli, Microelectron. Eng. 97, 157 (2012)
G. Pennelli, M. Totaro, M. Piotto, P. Bruschi, Nano Lett. 13, 2592 (2013)
F. Laermer, A. Schilp, Method of anisotropically etching silicon, U.S. Pat. 5501893A (Mar 26, 1996)
B. Wu, A. Kumar, S. Pamarthy, J. Appl. Phys. 108, 051101 (2010)
K.J. Morton, G. Nieberg, S. Bai, S.Y. Chou, Nanotechnology 19, 345301 (2008)
A. Zeniou, K. Ellinas, A. Olziersky, E. Gololides, Nanotechnology 25, 035302 (2014)
A. Stranz, J. Kahler, A. Merzsch, E. Peiner, Microsyst. Technol. 18, 857 (2012)
A. Stranz, A. Waag, E. Peiner, J. Electron. Mater. 42, 2233 (2013)
Z. Huang, N. Geyer, P. Werner, J. de Boor, U. Gosele, Adv. Mater. 23, 285 (2011)
J. Kim, H. Han, Y. Kim, S.H. Choi, J.C. Kim, W. Lee, ACS Nano 5, 3222 (2011)
W. Bohn, X. Li, Appl. Phys. Lett. 77, 2572 (2000)
K. Tsujino, M. Matsumura, Electrochim. Acta 53, 28 (2007)
L. Li, Y. Liu, X. Zhao, Z. Lin, C.P. Wong, Appl. Mater. Interfaces 5, 575 (2014)
Z. Huang, N. Geyer, L. Liu, M. Li, P. Zhong, Nanotechnology 21, 465301 (2010)
C. Chartier, S. Bastide, C. Levy-Clement, Electrochim. Acta 53, 5509 (2008)
K. Liu, S. Qu, F. Tan, Y. Bi, S. Lu, Z. Wang, Mater. Lett. 101, 96 (2013)
X. Li, Y. Xiao, C. Yan, K. Zhou, L. Schweizer, A. Sprafke, J.H. Lee, R.B. Wehrspohn, ECS Solid State Lett. 2, 22 (2013)
Z. Huang, H. Fang, J. Zhu, Adv. Mater. 19, 744 (2007)
K. Peng, M. Zhang, A. Lu, N.B. Wong, R. Zhang, S.T. Lee, Appl. Phys. Lett. 90, 163123 (2007)
Z. Huang, X. Zhang, M. Reiche, L. Liu, T. Lee, T. Shimizu, S. Senz, U. Gosele, Nano Lett. 8, 3046 (2008)
J. Hong, K. Kim, N. Kwon, J. Lee, D. Whang, J. Vac. Sci. Technol. B 28, 735 (2010)
G. Pennelli, A. Nannini, e-J. Surf. Sci. Nanotechnol. 7, 503 (2009)
K. Peng, Y. Yan, S. Gao, J. Zhu, Adv. Funct. Mater. 13, 127 (2003)
K. Peng, H. Fang, J. Hu, Y. Wu, J. Zhu, Y. Yan, S. Lee, Chem. Eur. J. 12, 7942 (2010)
C.Y. Chen, C.S. Wu, C.J. Chou, T.J. Yen, Adv. Mater. 20, 3811 (2008)
K. Tsujino, M. Matsumura, Adv. Mater. 17, 1045 (2005)
T. Zhang, S. Wu, R. Zheng, G. Cheng, Nanotechnology 24, 505718 (2013)
J. Weisse, A. Marconnet, D. Kim, P. Rao, M. Panzer, K. Goodson, X. Zheng, Nanoscale Res. Lett. 7, 554 (2012)
W. Koukharenko, S. Boden, D. Platzek, D. Bagnall, N. White, J. Electron. Mater. 42, 2114 (2013)
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Contribution to the Topical Issue “Silicon and Silicon-related Materials for Thermoelectricity”, edited by Dario Narducci.
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Pennelli, G. Top-down fabrication of silicon nanowire devices for thermoelectric applications: properties and perspectives. Eur. Phys. J. B 88, 121 (2015). https://doi.org/10.1140/epjb/e2015-50638-0
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DOI: https://doi.org/10.1140/epjb/e2015-50638-0