Abstract
In this paper, we synthesize VLS-grown rough Si nanowires using Mn as a catalyst with various surface roughnesses and diameters and measured their thermal conductivities. We grew the nanowires by a combination vapor-liquid-solid and vapor-solid mechanism for longitudinal and radial growth, respectively. The surface roughness was controlled from smooth up to about 37 nm by the radial growth. Our measurements showed that the thermal conductivity of rough surface Si nanowires is significantly lower than that of smooth surface nanowires and decreased with increasing surface roughness even though the diameter of the smooth nanowire was lower than that of the rough nanowires. Considering both nanowires were grown via the same growth mechanism, these outcomes clearly demonstrate that the rough surface induces phonon scattering and reduces thermal conductivity with this nanoscale-hole-free nanowires. Control of roughness induced phonon scattering in Si nanowires holds promise for novel thermoelectric devices with high figures of merit.
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A. Boukai, Y. Bunimovich, J. Tahir-Kheli, J. Yu, W. Goddard III, J. Heath, Silicon nanowires as efficient thermoelectric materials. Nature 451, 168–171 (2008)
A. Hochbaum, R. Chen, R. Delgado, W. Liang, E. Garnett, M. Najarian, A. Majumdar, P. Yang, Enhanced thermoelectric performance of rough silicon nanowires. Nature 451, 163–167 (2008)
H. Kim, I. Kim, H.J. Choi, W. Kim, Thermal conductivities of Si1-xGex nanowires with different germanium concentrations and diameters. Appl. Phys. Lett. 96, 233106 (2010)
D. Li, Y. Wu, R. Fan, P. Yang, A. Majumdar, Thermal conductivity of Si/SiGe superlattice nanowires. Appl. Phys. Lett. 83, 3186 (2003)
D. Li, Y. Wu, P. Kim, L. Shi, P. Yang, A. Majumdar, Thermal conductivity of individual silicon nanowires. Appl. Phys. Lett. 83, 2934 (2003)
N. Mingo, Calculation of Si nanowire thermal conductivity using complete phonon dispersion relations. Phys. Rev. B 68, 113308 (2003)
N. Mingo, L. Yang, D. Li, A. Majumdar, Predicting the thermal conductivity of Si and Ge nanowires. Nano Lett. 3, 1713–1716 (2003)
L. Liu, X. Chen, Effect of surface roughness on thermal conductivity of silicon nanowires. J. Appl. Phys. 107, 033501 (2010)
P. Martin, Z. Aksamija, E. Pop, U. Ravaioli, Impact of phonon-surface roughness scattering on thermal conductivity of thin Si nanowires. Phys. Rev. Lett. 102, 125503 (2009)
A. Moore, S. Saha, R. Prasher, L. Shi, Phonon backscattering and thermal conductivity suppression in sawtooth nanowires. Appl. Phys. Lett. 93, 083112 (2008)
R. Chen, A. Hochbaum, P. Murphy, J. Moore, P. Yang, A. Majumdar, Thermal conductance of thin silicon nanowires. Phys. Rev. Lett. 101, 105501 (2008)
A.I. Hochbaum, D. Gargas, Y.J. Hwang, P.D. Yang, Single crystalline mesoporous silicon nanowires. Nano Lett. 9, 3550–3554 (2009)
K. Hippalgaonkar, B.L. Huang, R.K. Chen, K. Sawyer, P. Ercius, A. Majumdar, Fabrication of microdevices with integrated nanowires for investigating low-dimensional phonon transport. Nano Lett. 10, 4341–4348 (2010)
L. Shi, D. Li, C. Yu, W. Jang, D. Kim, Z. Yao, P. Kim, A. Majumdar, Measuring thermal and thermoelectric properties of one-dimensional nanostructures using a microfabricated device. J. Heat Transf. 125, 881 (2003)
H. Jeong, T. Park, H. Seong, M. Kim, U. Kim, H. Choi, Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism. Chem. Phys. Lett. 467, 331–4 (2009)
T. Kamilov, D. Kabilov, I. Samiev, K. Khusnutdinova, R. Muminov, V. Klechkovskaya, Formation of higher manganese silicide films on silicon. Tech. Phys. 50, 1102–1104 (2005)
M.H. James, Interfaces in Materials (Wiley-Interscience, New York, 1997)
G. Cao, Nanostructure and Nanomaterials: Synthesis, Properties & Applications Imperial (College Press, London, 2004)
J. Park, H. Choi, J. Park, Scaffolding and filling process: a new type of 2D crystal growth. J. Cryst. Growth 263, 237–242 (2004)
S. Kodambaka, J. Tersoff, M. Reuter, F. Ross, Germanium nanowire growth below the eutectic temperature. Science 316, 729 (2007)
H. Adhikari, A. Marshall, C. Chidsey, P. McIntyre, Germanium nanowire epitaxy: shape and orientation control. Nano Lett. 6, 318–323 (2006)
I.V. Markov, Crystal Growth for Beginners (World Scientific, Singapore, 2003)
G. Zhou, Z. Zhang, D. Yu, Growth morphology and micro-structural aspects of Si nanowires synthesized by laser ablation. J. Cryst. Growth 197, 129–135 (1999)
F. Oehler, P. Gentile, T. Baron, P. Ferret, M. Den Hertog, J. Rouviere, The importance of the radial growth in the faceting of silicon nanowires. Nano Lett. 10, 2335–2341 (2010)
F. Li, P. Nellist, D. Cockayne, Doping-dependent nanofaceting on silicon nanowire surfaces. Appl. Phys. Lett. 94, 263111 (2009)
D. Eaglesham, A. White, L. Feldman, N. Moriya, D. Jacobson, Equilibrium shape of Si. Phys. Rev. Lett. 70, 1643–1646 (1993)
C.H. Yu, S. Saha, J.H. Zhou, L. Shi, A.M. Cassell, B.A. Cruden, Q. Ngo, J. Li, Thermal contact resistance and thermal conductivity of a carbon nanofiber. J. Heat Transf. 128, 234–239 (2006)
H. Kim, Y. Park, I. Kim, J. Kim, H. Choi, W. Kim, Effect of surface roughness on thermal conductivity of VLS-grown rough Si1-xGex nanowires. Appl. Phys. A (2011). doi:10.1007/s00339-011-6475-0
T. Borca-Tasciuc, D. Achimov, W. Liu, G. Chen, H. Ren, C. Lin, S. Pei, Thermal conductivity of InAs/AlSb superlattices. Nanoscale Microscale Thermophys. Eng. 5, 225–231 (2001)
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Y.-H. Park and J. Kim contributed equally to this paper.
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Park, YH., Kim, J., Kim, H. et al. Thermal conductivity of VLS-grown rough Si nanowires with various surface roughnesses and diameters. Appl. Phys. A 104, 7–14 (2011). https://doi.org/10.1007/s00339-011-6474-1
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DOI: https://doi.org/10.1007/s00339-011-6474-1