Abstract
The topography, composition, and electronic and crystal structures of the surface of SiO2 films fabricated by the implantation of O +2 ions in Si (111) with subsequent annealing are investigated. It is established that at high ion implantation doses (D ≥ 6 × 1016 cm−2), continuous homogeneous polycrystalline SiO2 films form, while at relatively low doses (D = 8 × 1015−4 × 1016 cm−2), SiO2 films with regularly arranged Si nano-areas with a density of 1010–1011 cm−2 form.
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References
V. I. Rudakov, Yu. I. Denisenko, V. V. Naumov, and S. G. Simakin, Russ. Microelectron. 40, 389 (2011).
M. V. Gomoyunova, G. S. Grebenyuk, and I. I. Pronin, Tech. Phys. 56, 865 (2011).
V. G. Lifshits, Electron Spectroscopy and Atomic Processes on Silicon Surface (Nauka, Moscow, 1985) [in Russian].
S. B. Vakhrushev, A. V. Filimonov, E. Yu. Koroleva, A. A. Naberezhnov, and Yu. A. Kumzerov, Physics of Nanoporous Structures (Politekh. Univ., St.-Petersburg, 2010) [in Russian].
R. G. Musket, J. M. Yoshiyama, and J. Contolini, Appl. Phys. 91, 5760 (2002).
F. F. Komarov, L. A. Vlasukova, V. N. Yuvchenko, A. Yu. Didyk, and V. A. Skuratov, Izv. Akad. Nauk, Ser. Fiz. 70, 798 (2006).
A. A. Altukhov, Extended Abstract of Candidate’s Dissertation in Engineering Sciences (TsNITI “Tekhnomash”, Moscow, 2005) [in Russian].
D. A. Tashmukhamedova, Bull. Russ. Acad. Sci.: Phys. 70, 1409 (2006).
Kh. Kh. Boltaev, D. A. Tashmukhamedova, and B. E. Umirzakov, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 8, 326 (2014).
D. A. Tashmukhamedova, B. E. Umirzakov, and A. K. Tashatov, Uzb. J. Phys. 2, 38 (2000).
D. A. Tashmukhamedova, B. E. Umirzakov, D. M. Muradkabilov, S. B. Danaev, and T. Sh. Khakimov, in Proceedings of the 21st International Conference on Interaction of Ions with Surface (Moscow, 2013), Vol. 1, p. 492.
B. E. Umirzakov and D. A. Tashmukhamedova, Electron Spectroscopy of Nanofilms and Nanostructures Prepared by Ion Implantation (Tashkent. Gos. Tekh. Univ., Tashkent, 2004) [in Russian].
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Original Russian Text © Y.S. Ergashov, D.A. Tashmukhamedova, E. Rabbimov, 2015, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2015, No. 4, pp. 38–43.
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Ergashov, Y.S., Tashmukhamedova, D.A. & Rabbimov, E. Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation. J. Surf. Investig. 9, 350–354 (2015). https://doi.org/10.1134/S1027451015020287
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DOI: https://doi.org/10.1134/S1027451015020287