Abstract
A SiO2/Si/CoSi2/Si(111) heterostructure is synthesized via successive Co+- and O +2 -ion implantation into silicon followed by annealing. The optimal implantation and annealing conditions needed to obtain such a structure are determined. It is demonstrated that CoSi2 and SiО2 layers formed in the surface region are single- and polycrystalline, respectively.
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Original Russian Text © Y.S. Ergashov, B.E. Umirzakov, 2018, published in Poverkhnost’, 2018, No. 8, pp. 91–94.
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Ergashov, Y.S., Umirzakov, B.E. Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation. J. Surf. Investig. 12, 816–818 (2018). https://doi.org/10.1134/S1027451018040298
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DOI: https://doi.org/10.1134/S1027451018040298