Abstract
We have studied arsenic incorporation from tris(dimethylamino)arsine into epitaxial CdTe layers in a metalorganic chemical vapor deposition (MOCVD) process. Arsenic incorporation into the layers has been shown to depend on the crystallographic orientation of their growth. Incorporation effectiveness increases in the order (111)B < (211)B < (100) < (310) < (211)A. Arsenic concentration in the CdTe layers is proportional to the tris(dimethylamino)arsine flow rate to the power 3/2. The dependence of arsenic incorporation on the ratio of the metalorganic tellurium and cadmium precursors in the vapor phase suggests that arsenic is incorporated predominantly into the anion sublattice. The maximum concentration of free charge carriers, p 295 = (1–2) × 1017 cm–3, was observed after annealing of the arsenic-doped CdTe layers in an argon atmosphere.
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References
Chopra, K.L., Paulson, P.D., and Dutta, V., Thin-film solar cells: an overview, Prog. Photovoltaics, 2004, vol. 12, nos. 2–3, pp. 69–92.
Szeles, C., CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications, Phys. Status Solidi B, 2004, vol. 241, no. 3, pp. 783–790.
Ghandhi, S.K., Taskar, N.R., and Bhat, I.B., Arsenicdoped p-CdTe layers grown by organometallic vapor phase epitaxy, Appl. Phys. Lett., 1987, vol. 50, no. 14, pp. 900–902.
Ekawa, M., Yasuda, K., Ferind, T., Saji, M., and Tanaka, A., Mechanism of arsenic incorporation and electrical properties in CdTe layers grown by metalorganic vapor phase epitaxy, J. Appl. Phys., 1992, vol. 7, no. 6, pp. 2669–2674.
Rowlands, R.L., Irvine, S.J.C., Barrioz, V., Jones, E.W., and Lamb, D.A., SIMS analysis of intentional in situ arsenic doping in CdS/CdTe solar cells, Semicond. Sci. Technol., 2008, vol. 23, no. 1, paper 015017.
Su, P.Y., Lee, C., Wang, G.C., Lu, T.M., and Bhat, I.B., CdTe/ZnTe/GaAs heterostructures for single-crystal CdTe solar cells, J. Electron. Mater., 2014, vol. 43, no. 8, pp. 2895–2900.
Salim, S., Li, C.K., and Jense, K.F., Gas-phase decomposition reactions of tris(dimethylamino) phosphine, arsine, and stibine reagents, Chem. Mater., 1995, vol. 7, no. 3, pp. 507–516.
Molva, E., Saminadayar, K., Pautrat, J.L., and Ligeon, E., Photoluminescence studies in N, P, As implanted cadmium telluride, Solid State Commun., 1983, vol. 48, no. 11, pp. 955–960.
Wei, S.H. and Zhang, S.B., Chemical trends of defect formation and doping limit in II–VI semiconductors: the case of CdTe, Phys. Rev. B: Condens. Matter Mater. Phys., 2002, vol. 66, no. 15, paper 155211.
Chilyasov, A.V., Moiseev, A.N., Stepanov, B.S., Savlinov, K.E., Kotkov, A.P., and Grishnova, N.D., Growth of epitaxial CdxHg1–xTe layers on large-diameter GaAs substrates by chemical vapor deposition from metalorganic and mercury vapor, Usp. Prikl. Fiz., 2013, vol. 1, no. 2, pp. 209–215.
Stringfellow, G.B., Organometallic Vapor-Phase Epitaxy: Theory and Practice, New York: Academic, 1999.
Bond strengths in diatomic molecules, CRC Handbook of Chemistry and Physics, Lide, D.R., Ed., Boca Raton: CRC Press, 2005. http://www.hbcpnetbase.com.
Svob, L., Cheze, I., Lusson, A., Ballutaud, D., Rommeluere, J.F., and Marfaing, Y., Crystallographic orientation dependence of As incorporation in MOVPE-grown CdTe and corresponding acceptor electrical state activation, J. Cryst. Growth, 1998, vol. 184, pp. 459–464.
Yang, J.H., Yin, W.J., Park, J.S., Burst, J., Metzger, W.K., Gessert, T., Barnes, T., and Wei, S.H., Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing, J. Appl. Phys., 2015, vol. 118, no. 2, paper 025 102.
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Original Russian Text © A.V. Chilyasov, A.N. Moiseev, V.S. Evstigneev, B.S. Stepanov, M.N. Drozdov, 2016, published in Neorganicheskie Materialy, 2016, Vol. 52, No. 12, pp. 1284–1289.
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Chilyasov, A.V., Moiseev, A.N., Evstigneev, V.S. et al. Growth of arsenic-doped cadmium telluride epilayers by metalorganic chemical vapor deposition. Inorg Mater 52, 1210–1214 (2016). https://doi.org/10.1134/S0020168516120037
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DOI: https://doi.org/10.1134/S0020168516120037