Abstract
p-Type doping of the absorbed layer has been a significant challenge for CdTe solar cells. In this work, we report on in situ arsenic doping of molecular beam epitaxy (MBE) CdTe grown on Si(211) and the use of a cadmium overpressure to enhance incorporation. When growing CdTe:As without a Cd overpressure, extremely high As fluxes are required to achieve noticeable amounts of arsenic incorporation. By supplying a Cd flux during growth, the As incorporation increases by an order of magnitude. By including a Cd overpressure during growth, we have obtained single-crystal CdTe:As films with As incorporation concentration of \(1\times 10^{17} \, \mathrm {\rm cm}^{-3}\). An activation anneal was performed on these films in a rapid thermal annealing furnace, resulting in p-type layers with net carrier concentration of ∼5 × 1016 cm−3.
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Farrell, S., Barnes, T., Metzger, W.K. et al. In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy. J. Electron. Mater. 44, 3202–3206 (2015). https://doi.org/10.1007/s11664-015-3913-3
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DOI: https://doi.org/10.1007/s11664-015-3913-3